IRF7402TRPBF International Rectifier, IRF7402TRPBF Datasheet - Page 5

• Manufacturer Part Number: IRF7402TRPBF
• Description: MOSFET N-CH 20V 6.8A 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7402TRPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 35 mOhm @ 4.1A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 6.8A
• Vgs(th) (max) @ Id: 700mV @ 250µA
• Gate Charge (qg) @ Vgs: 22nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 650pF @ 15V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 35 mOhms
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: 12 V
• Continuous Drain Current: 6.8 A
• Power Dissipation: 2.5 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 14 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IRF7402PBFTR; IRF7402TRPBF; IRF7402TRPBFTR

www.irf.com
8.0
6.0
4.0
2.0
0.0
100
25
0.1
10
0.00001
Fig 9. Maximum Drain Current Vs.
1
D = 0.50
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
0.20
0.10
0.05
0.02
0.01
50
Ambient Temperature
T , Case Temperature ( C)
C
(THERMAL RESPONSE)
0.0001
SINGLE PULSE
75
100
0.001
t , Rectangular Pulse Duration (sec)
1
125
°
0.01
150
0.1
Fig 10b. Switching Time Waveforms
Fig 10a. Switching Time Test Circuit
V
90%
10%
V
DS
GS
1. Duty factor D = t / t
2. Peak T = P
Notes:
R
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
G
t
4.5V
d(on)
V
1
J
GS
DM
V
t
r
DS
x Z
1
IRF7402PbF
thJC
P
2
DM
+ T
10
C
t
1
D.U.T.
t
2
R
t
d(off)
D
100
t
f
+
-
V
DD
5