IRF7402 International Rectifier, IRF7402 Datasheet

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IRF7402

Manufacturer Part Number
IRF7402
Description
HEXFET Power MOSFET
Manufacturer
International Rectifier
Datasheet

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www.datasheet4u.com
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Thermal Resistance
Description
Fifth Generation HEXFET
International Rectifier utilize advanced processing
techniques to achieve extremely low on-resistance per
silicon area. This benefit, combined with the fast switching
speed and ruggedized device design that HEXFET
power MOSFETs
designer with an extremely efficient and reliable device
for use in a wide variety of applications.
The SO-8 has been modified through a customized
leadframe for enhanced thermal characterstics and
multiple-die capability making it ideal in a variety of
power applications. With these improvements, multiple
devices can be used in an application with dramatically
reduced board space. The package is designed for
vapor phase, infrared or wave soldering techniques.
Power dissipation of greater than 0.8 W is possible in a
typical PCB mount application.
Absolute Maximum Ratings
www.irf.com
I
I
I
P
P
V
dv/dt
T
R
D
D
DM
GS
J,
D
D
@ T
@ T
JA
Generation V Technology
Ultra Low On-Resistance
N-Channel MOSFET
Very Small SOIC Package
Low Profile (<1.1mm)
Available in Tape & Reel
Fast Switching
@T
@T
T
STG
A
A
A
A
= 25°C
= 70°C
= 25°C
= 70°C
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current 
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
Junction and Storage Temperature Range
Maximum Junction-to-Ambient
are well known for, provides the
®
power MOSFETs from
Parameter
Parameter
GS
GS
@ 4.5V
@ 4.5V
G
S
S
S
1
2
3
4
T o p V ie w
8
6
5
7
HEXFET
-55 to + 150
D
D
D
D
A
A
Max.
0.02
± 12
6.8
5.4
2.5
1.6
5.0
SO-8
54
Max.
50
®
R
IRF7402
Power MOSFET
DS(on)
V
DSS
= 0.035
PD - 93851A
= 20V
Units
Units
W/°C
°C/W
V/ns
°C
W
A
V
1
2/22/00

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IRF7402 Summary of contents

Page 1

... Junction and Storage Temperature Range J, STG Thermal Resistance R Maximum Junction-to-Ambient JA www.irf.com ® power MOSFETs from Parameter @ 4. 4.5V GS ‚ Parameter „ 93851A IRF7402 ® HEXFET Power MOSFET 20V DSS 0.035 D DS(on) SO-8 Max. Units 6 ...

Page 2

... IRF7402 www.datasheet4u.com Electrical Characteristics @ T V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source Forward Leakage I GSS Gate-to-Source Reverse Leakage ...

Page 3

... G ate-to -So urce Voltag e ( Fig 3. Typical Transfer Characteristics www.irf.com 20 µ 1. 5° µ 2.5 3.0 3.5 IRF7402 VGS TO P 7.5V 5.0V 4.0V 3.5V 3.0V 2.5V 2.0V BOT TOM 1. . µ °C J 0.1 ...

Page 4

... IRF7402 www.datasheet4u.com iss iss oss rss rain-to-S ourc e V oltage ( Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 0° 5°C ...

Page 5

... RESPONSE) 0.1 0.00001 0.0001 Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient www.irf.com 75 100 125 150 ° SINGLE PULSE 0.001 0.01 0 Rectangular Pulse Duration (sec) 1 IRF7402 D.U. 4.5V Pulse Width µs Duty Factor Fig 10a. Switching Time Test Circuit V DS ...

Page 6

... IRF7402 www.datasheet4u.com 4. Fig 12a. Basic Gate Charge Waveform , Fig 13. Typical On-Resistance Vs. Drain Charge Current Current Regulator Same Type as D.U.T. 50K .2 F 12V .3 F D.U. 3mA Current Sampling Resistors Fig 12b. Gate Charge Test Circuit , D /5 Fig 14. Typical On-Resistance Vs. Gate Voltage www ...

Page 7

... SO-8 Part Marking www.irf.com 0 ° .10 (. IRF7402 LIM .0532 .0688 1 . .0040 .0098 0 .10 B .014 .018 0 .36 C ...

Page 8

... IRF7402 www.datasheet4u.com SO-8 Tape and Reel WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 252-7105 IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel 3983 0086 IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel 838 4630 IR TAIWAN:16 Fl ...

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