IRF7402TRPBF International Rectifier, IRF7402TRPBF Datasheet - Page 2

• Manufacturer Part Number: IRF7402TRPBF
• Description: MOSFET N-CH 20V 6.8A 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7402TRPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 35 mOhm @ 4.1A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 6.8A
• Vgs(th) (max) @ Id: 700mV @ 250µA
• Gate Charge (qg) @ Vgs: 22nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 650pF @ 15V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 35 mOhms
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: 12 V
• Continuous Drain Current: 6.8 A
• Power Dissipation: 2.5 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 14 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IRF7402PBFTR; IRF7402TRPBF; IRF7402TRPBFTR

IRF7402PbF
Electrical Characteristics @ T
Notes:
Source-Drain Ratings and Characteristics
V
∆V
V
g
Q
Q
Q
t
t
t
t
C
C
C
I
I
V
t
Q
R
I
d(on)
d(off)
f
I
r
S
SM
DSS
rr
fs
GSS
(BR)DSS
GS(th)
iss
oss
rss
SD
g
gs
gd
DS(on)
Repetitive rating; pulse width limited by
rr
I
T
(BR)DSS
2
max. junction temperature. (See fig. 11)
SD
J
≤ 150°C
≤ 3.8A, di/dt ≤ 96A/µs, V
/∆T
J
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Gate Threshold Voltage
Forward Transconductance
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Static Drain-to-Source On-Resistance
Drain-to-Source Leakage Current
Parameter
Parameter
DD
≤ V
(BR)DSS
J
,
= 25°C (unless otherwise specified)
Min. Typ. Max. Units
0.70 –––
Min. Typ. Max. Units
–––
––– 0.024 –––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
6.1
20
When mounted on 1 inch square copper board, t<10 sec
Pulse width ≤ 300µs; duty cycle ≤ 2%.
This data sheet has curves & data from IRF7601
150
–––
–––
–––
–––
–––
––– -100
650
300
–––
–––
2.0
6.3
5.1
–––
14
47
24
32
69
51
0.035
0.050
–––
–––
–––
–––
–––
–––
–––
100
–––
–––
–––
100
1.0
3.0
9.5
1.2
25
22
2.5
77
54
V/°C
µA
nA
nC
pF
nC
ns
ns
V
V
S
Ω
V
A
V
Reference to 25°C, I
V
V
V
V
V
V
V
I
V
V
V
I
R
R
V
V
ƒ = 1.0MHz, See Fig. 5
V
di/dt = 100A/µs
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
T
D
D
GS
GS
GS
DS
DS
DS
DS
GS
GS
DS
GS
DD
GS
DS
J
J
G
D
= 3.8A
= 3.8A
= 25°C, I
= 25°C, I
= 6.2Ω
= 2.6Ω
= V
= 10V, I
= 16V, V
= 16V, V
= 12V
= -12V
= 16V
= 0V
= 15V
= 0V, I
= 4.5V, I
= 2.7V, I
= 4.5V, See Fig. 6 and 12
= 10V
GS
Conditions
, I
D
S
F
D
D
= 250µA
D
D
GS
GS
Conditions
= 3.8A, V
= 3.8A
= 250µA
= 1.9A
= 4.1A
= 3.5A
= 0V
= 0V, T
D
www.irf.com
= 1mA
GS
J
= 125°C
= 0V
G
S
D