IRF7402TRPBF International Rectifier, IRF7402TRPBF Datasheet

MOSFET N-CH 20V 6.8A 8-SOIC

IRF7402TRPBF

Manufacturer Part Number
IRF7402TRPBF
Description
MOSFET N-CH 20V 6.8A 8-SOIC
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet

Specifications of IRF7402TRPBF

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
35 mOhm @ 4.1A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
6.8A
Vgs(th) (max) @ Id
700mV @ 250µA
Gate Charge (qg) @ Vgs
22nC @ 4.5V
Input Capacitance (ciss) @ Vds
650pF @ 15V
Power - Max
2.5W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
35 mOhms
Drain-source Breakdown Voltage
20 V
Gate-source Breakdown Voltage
12 V
Continuous Drain Current
6.8 A
Power Dissipation
2.5 W
Mounting Style
SMD/SMT
Gate Charge Qg
14 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
IRF7402PBFTR
IRF7402TRPBF
IRF7402TRPBFTR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRF7402TRPBF
Manufacturer:
IR
Quantity:
20 000
Company:
Part Number:
IRF7402TRPBF
Quantity:
9 000
Thermal Resistance
Description
Fifth Generation HEXFET
International Rectifier utilize advanced processing
techniques to achieve extremely low on-resistance per
silicon area. This benefit, combined with the fast switching
speed and ruggedized device design that HEXFET
power MOSFETs
designer with an extremely efficient and reliable device
for use in a wide variety of applications.
The SO-8 has been modified through a customized
leadframe for enhanced thermal characterstics and
multiple-die capability making it ideal in a variety of
power applications. With these improvements, multiple
devices can be used in an application with dramatically
reduced board space. The package is designed for
vapor phase, infrared or wave soldering techniques.
Power dissipation of greater than 0.8 W is possible in a
typical PCB mount application.
www.irf.com
Absolute Maximum Ratings
I
I
I
P
P
V
dv/dt
T
R
D
D
DM
D
D
GS
J,
θJA
@ T
@ T
Generation V Technology
Ultra Low On-Resistance
N-Channel MOSFET
Very Small SOIC Package
Low Profile (<1.1mm)
Available in Tape & Reel
Fast Switching
Lead-Free
@T
@T
T
STG
A
A
A
A
= 25°C
= 70°C
= 25°C
= 70°C
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
Junction and Storage Temperature Range
Maximum Junction-to-Ambient
are well known for, provides the
®
power MOSFETs from
Parameter
Parameter
GS
GS
@ 4.5V
@ 4.5V
G
S
S
S
1
2
3
4
Top View
8
7
6
5
HEXFET
IRF7402PbF
-55 to + 150
D
D
D
D
A
A
Max.
0.02
± 12
6.8
5.4
2.5
1.6
5.0
SO-8
54
Max.
50
®
R
DS(on)
Power MOSFET
V
DSS
= 0.035Ω
= 20V
PD - 95202
Units
Units
W/°C
°C/W
V/ns
°C
W
A
V
1
9/30/04

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IRF7402TRPBF Summary of contents

Page 1

... Lead-Free Description ® Fifth Generation HEXFET power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications ...

Page 2

IRF7402PbF Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient ∆V /∆T (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source Forward ...

Page 3

VGS TOP 7.5V 5.0V 4.0V 3.5V 3.0V 2.5V 2.0V BOTTOM 1. 20µs PULSE WIDTH 1. 25°C J 0.1 0 Drain-to-Source Voltage (V) DS Fig 1. Typical Output Characteristics 100 ...

Page 4

IRF7402PbF 1200 1MHz iss rss gd 1000 oss iss 800 C oss 600 400 C rss ...

Page 5

T , Case Temperature ( C) C Fig 9. Maximum Drain Current Vs. Ambient Temperature 100 D = 0.50 0.20 10 0.10 0.05 0.02 1 0.01 SINGLE PULSE (THERMAL RESPONSE) 0.1 ...

Page 6

IRF7402PbF Charge Fig 12a. Basic Gate Charge Waveform . Drain Current (A) Fig 13. Typical On-Resistance Vs. Drain Current 6 Same Type as D.U.T. ...

Page 7

SO-8 Package Outline Dimensions are shown in milimeters (inches 0.25 [.010] NOTES: 1. DIMENSIONING & TOLERANCING PER ASME Y14.5M-1994. 2. CONTROLLING DIMENSION: MILLIMETER 3. DIMENSIONS ARE SHOWN IN MILLIMETERS ...

Page 8

IRF7402PbF SO-8 Tape and Reel Dimensions are shown in milimeters (inches) NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE ...

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