IRF7402TRPBF International Rectifier, IRF7402TRPBF Datasheet - Page 3

• Manufacturer Part Number: IRF7402TRPBF
• Description: MOSFET N-CH 20V 6.8A 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7402TRPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 35 mOhm @ 4.1A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 6.8A
• Vgs(th) (max) @ Id: 700mV @ 250µA
• Gate Charge (qg) @ Vgs: 22nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 650pF @ 15V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 35 mOhms
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: 12 V
• Continuous Drain Current: 6.8 A
• Power Dissipation: 2.5 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 14 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IRF7402PBFTR; IRF7402TRPBF; IRF7402TRPBFTR

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100
100
0.1
0.1
10
10
1
1
1.5
0.1
T = 150°C
Fig 3. Typical Transfer Characteristics
TOP
BOTTOM 1.5V
Fig 1. Typical Output Characteristics
J
V
V
T = 25°C
GS
DS
VGS
7.5V
5.0V
4.0V
3.5V
3.0V
2.5V
2.0V
J
2.0
, Gate-to-Source Voltage (V)
, Drain-to-Source Voltage (V)
1.5V
2.5
1
V
20µs PULSE WIDTH
20µs PULSE WIDTH
T = 25°C
DS
J
= 10V
3.0
3.5
10
A
A
2.0
1.5
1.0
0.5
0.0
100
0.1
10
-60 -40 -20
1
0.1
I
Fig 4. Normalized On-Resistance
Fig 2. Typical Output Characteristics
D
TOP
BOTTOM 1.5V
= 3.8A
T , Junction Temperature (°C)
J
V
DS
VGS
7.5V
5.0V
4.0V
3.5V
3.0V
2.5V
2.0V
Vs. Temperature
0
, Drain-to-Source Voltage (V)
20
IRF7402PbF
40
1
60
1.5V
20µs PULSE WIDTH
T = 150°C
J
80 100 120 140 160
V
GS
= 4.5V
3
10
A
A