IRF7402TRPBF International Rectifier, IRF7402TRPBF Datasheet - Page 4

• Manufacturer Part Number: IRF7402TRPBF
• Description: MOSFET N-CH 20V 6.8A 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7402TRPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 35 mOhm @ 4.1A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 6.8A
• Vgs(th) (max) @ Id: 700mV @ 250µA
• Gate Charge (qg) @ Vgs: 22nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 650pF @ 15V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 35 mOhms
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: 12 V
• Continuous Drain Current: 6.8 A
• Power Dissipation: 2.5 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 14 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IRF7402PBFTR; IRF7402TRPBF; IRF7402TRPBFTR

IRF7402PbF
4
1200
1000
100
800
600
400
200
0.1
10
1
0
0.4
Fig 7. Typical Source-Drain Diode
1
Fig 5. Typical Capacitance Vs.
T = 150°C
J
C
C
C
Drain-to-Source Voltage
V
V
iss
oss
rss
SD
DS
0.8
Forward Voltage
V
C
C
C
, Drain-to-Source Voltage (V)
, Source-to-Drain Voltage (V)
T = 25°C
GS
iss
rss
oss
J
= 0V,
= C
= C
= C
1.2
gs
ds
gd
+ C
+ C
10
gd
gd
f = 1MHz
1.6
, C
ds
SHORTED
2.0
V
GS
= 0V
100
2.4
A
A
1000
100
10
10
1
8
6
4
2
0
1
0
Fig 8. Maximum Safe Operating Area
T
T
Single Pulse
I
V
C
J
D
DS
Fig 6. Typical Gate Charge Vs.
= 25 C
= 150 C
= 3.8A
OPERATION IN THIS AREA LIMITED
= 16V
V
4
DS
Gate-to-Source Voltage
°
Q , Total Gate Charge (nC)
°
, Drain-to-Source Voltage (V)
G
8
BY R
10
12
DS(on)
FOR TEST CIRCUIT
SEE FIGURE 9
100us
1ms
10ms
16
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20
100
24
A