PMV40UN,215 NXP Semiconductors, PMV40UN,215 Datasheet - Page 9

• Manufacturer Part Number: PMV40UN,215
• Description: MOSFET N-CH 30V 4.9A SOT-23
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of PMV40UN,215

• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 47 mOhm @ 2A, 4.5V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 4.9A
• Vgs(th) (max) @ Id: 700mV @ 1mA
• Gate Charge (qg) @ Vgs: 9.3nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 445pF @ 30V
• Power - Max: 1.9W
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.047 Ohm @ 4.5 V
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 8 V
• Continuous Drain Current: 4.9 A
• Power Dissipation: 1900 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-2355-2; 934057952215; PMV40UN T/R; PMV40UN T/R

Philips Semiconductors
7. Package outline
Fig 14. SOT23.
9397 750 11668
Product data
Plastic surface mounted package; 3 leads
DIMENSIONS (mm are the original dimensions)
UNIT
mm
VERSION
OUTLINE
SOT23
1.1
0.9
A
max.
A
0.1
1
1
0.48
0.38
b
p
IEC
e 1
0.15
0.09
c
D
e
3.0
2.8
D
b p
3
TO-236AB
JEDEC
1.4
1.2
E
REFERENCES
Rev. 01 — 05 August 2003
0
2
1.9
e
w
B
0.95
M
e
1
scale
B
EIAJ
1
2.5
2.1
H
E
0.45
0.15
L
A
p
2 mm
A 1
0.55
0.45
Q
H E
0.2
E
v
detail X
TrenchMOS™ ultra low level FET
PROJECTION
© Koninklijke Philips Electronics N.V. 2003. All rights reserved.
0.1
EUROPEAN
w
L p
A
Q
PMV40UN
c
X
v
ISSUE DATE
M
97-02-28
99-09-13
A
SOT23
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