PMV40UN,215 NXP Semiconductors, PMV40UN,215 Datasheet - Page 5

• Manufacturer Part Number: PMV40UN,215
• Description: MOSFET N-CH 30V 4.9A SOT-23
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of PMV40UN,215

• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 47 mOhm @ 2A, 4.5V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 4.9A
• Vgs(th) (max) @ Id: 700mV @ 1mA
• Gate Charge (qg) @ Vgs: 9.3nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 445pF @ 30V
• Power - Max: 1.9W
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.047 Ohm @ 4.5 V
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 8 V
• Continuous Drain Current: 4.9 A
• Power Dissipation: 1900 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-2355-2; 934057952215; PMV40UN T/R; PMV40UN T/R

Philips Semiconductors
6. Characteristics
Table 5:
T
9397 750 11668
Product data
Symbol Parameter
Static characteristics
V
V
I
I
R
Dynamic characteristics
Q
Q
Q
C
C
C
t
t
t
t
Source-drain diode
V
DSS
GSS
d(on)
r
d(off)
f
j
(BR)DSS
GS(th)
SD
DSon
iss
oss
rss
g(tot)
gs
gd
= 25 C unless otherwise specified.
drain-source breakdown voltage
gate-source threshold voltage
drain-source leakage current
gate-source leakage current
drain-source on-state resistance
total gate charge
gate-source charge
gate-drain (Miller) charge
input capacitance
output capacitance
reverse transfer capacitance
turn-on delay time
rise time
turn-off delay time
fall time
source-drain (diode forward) voltage I
Characteristics
Conditions
I
I
V
V
V
V
V
I
Figure 13
V
Figure 11
V
V
D
D
D
S
DS
GS
GS
GS
GS
GS
DD
GS
Rev. 01 — 05 August 2003
T
T
T
T
T
T
T
T
= 1.25 A; V
= 250 A; V
= 1 mA; V
= 1 A; V
j
j
j
j
j
j
j
j
= 30 V; V
= 8 V; V
= 4.5 V; I
= 2.5 V; I
= 1.8 V; I
= 0 V; V
= 15 V; R
= 4.5 V; R
= 25 C
= 55 C
= 25 C
= 150 C
= 25 C
= 150 C
= 25 C
= 150 C
DD
DS
DS
D
D
D
= 15 V; V
GS
GS
DS
L
GS
G
= V
= 2 A;
= 1.5 A;
= 1 A;
= 30 V; f = 1 MHz;
= 15 ;
= 6
= 0 V;
= 0 V
= 0 V
= 0 V
GS
;
Figure 7
Figure 7
Figure 9
GS
Figure 12
Figure 7
= 4.5 V;
and
and
and
8
8
TrenchMOS™ ultra low level FET
8
© Koninklijke Philips Electronics N.V. 2003. All rights reserved.
Min
30
27
0.45
0.25
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
PMV40UN
Typ
-
-
0.7
0.4
-
-
10
40
68
45
55
9.3
0.7
2.2
445
65
50
6
12
38
12
0.66
Max
-
-
-
-
1
100
100
47
79.9
53
73
-
-
-
-
-
-
-
-
-
-
1.2
Unit
V
V
V
V
V
nA
m
m
m
m
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
V
5 of 12
A
A