PMV40UN,215 NXP Semiconductors, PMV40UN,215 Datasheet - Page 6

• Manufacturer Part Number: PMV40UN,215
• Description: MOSFET N-CH 30V 4.9A SOT-23
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of PMV40UN,215

• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 47 mOhm @ 2A, 4.5V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 4.9A
• Vgs(th) (max) @ Id: 700mV @ 1mA
• Gate Charge (qg) @ Vgs: 9.3nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 445pF @ 30V
• Power - Max: 1.9W
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.047 Ohm @ 4.5 V
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 8 V
• Continuous Drain Current: 4.9 A
• Power Dissipation: 1900 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-2355-2; 934057952215; PMV40UN T/R; PMV40UN T/R

Philips Semiconductors
9397 750 11668
Product data
Fig 5. Output characteristics: drain current as a
Fig 7. Drain-source on-state resistance as a function
R DSon
(m )
T
T
(A)
I D
j
j
= 25 C
80
60
40
20
= 25 C
20
15
10
0
5
0
function of drain-source voltage; typical values.
of drain current; typical values.
0
0
T j = 25 C
0.5
5
4.5 V
2.5 V
10
1
V GS = 1.8 V
2.2 V
1.5
15
V GS = 1.2 V
V DS (V)
I D (A)
2 V
03an56
03an55
1.8 V
1.6 V
1.4 V
2.2 V
2.5 V
4.5 V
2 V
20
Rev. 01 — 05 August 2003
2
Fig 6. Transfer characteristics: drain current as a
Fig 8. Normalized drain-source on-state resistance
T
a
(A)
j
a
I D
1.8
1.2
0.6
= 25 C and 150 C; V
=
20
15
10
5
0
0
function of gate-source voltage; typical values.
factor as a function of junction temperature.
-60
---------------------------- -
R
0
DSon 25 C
V DS > I D x R DSon
R
DSon
T j = 150 C
0
TrenchMOS™ ultra low level FET
1
© Koninklijke Philips Electronics N.V. 2003. All rights reserved.
DS
25 C
60
I
D
x R
2
DSon
PMV40UN
120
V GS (V)
T j ( C)
03al00
03an57
180
3
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