PMV40UN,215 NXP Semiconductors, PMV40UN,215 Datasheet - Page 8

• Manufacturer Part Number: PMV40UN,215
• Description: MOSFET N-CH 30V 4.9A SOT-23
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of PMV40UN,215

• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 47 mOhm @ 2A, 4.5V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 4.9A
• Vgs(th) (max) @ Id: 700mV @ 1mA
• Gate Charge (qg) @ Vgs: 9.3nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 445pF @ 30V
• Power - Max: 1.9W
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.047 Ohm @ 4.5 V
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 8 V
• Continuous Drain Current: 4.9 A
• Power Dissipation: 1900 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-2355-2; 934057952215; PMV40UN T/R; PMV40UN T/R

Philips Semiconductors
9397 750 11668
Product data
Fig 12. Source (diode forward) current as a function of
T
(A)
I S
j
= 25 C and 150 C; V
20
15
10
5
0
source-drain (diode forward) voltage; typical
values.
0
V GS = 0 V
150 C
0.5
GS
= 0 V
T j = 25 C
1
V SD (V)
03an58
1.5
Rev. 01 — 05 August 2003
Fig 13. Gate-source voltage as a function of gate
I
V GS
D
(V)
= 1 A; V
5
4
3
2
1
0
charge; typical values.
0
I D = 1 A
T j = 25 C
V DD = 15 V
DD
= 15 V
2
TrenchMOS™ ultra low level FET
4
© Koninklijke Philips Electronics N.V. 2003. All rights reserved.
6
PMV40UN
8
Q G (nC)
03an60
10
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