PMV40UN,215 NXP Semiconductors, PMV40UN,215 Datasheet

MOSFET N-CH 30V 4.9A SOT-23

PMV40UN,215

Manufacturer Part Number
PMV40UN,215
Description
MOSFET N-CH 30V 4.9A SOT-23
Manufacturer
NXP Semiconductors
Series
TrenchMOS™r
Datasheet
1.PMV40UN215.pdf (12 pages)

Specifications of PMV40UN,215

Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
47 mOhm @ 2A, 4.5V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
4.9A
Vgs(th) (max) @ Id
700mV @ 1mA
Gate Charge (qg) @ Vgs
9.3nC @ 4.5V
Input Capacitance (ciss) @ Vds
445pF @ 30V
Power - Max
1.9W
Mounting Type
Surface Mount
Minimum Operating Temperature
- 55 C
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.047 Ohm @ 4.5 V
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
+/- 8 V
Continuous Drain Current
4.9 A
Power Dissipation
1900 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
568-2355-2
934057952215
PMV40UN T/R
PMV40UN T/R
1. Product profile
2. Pinning information
Table 1:
Pin
1
2
3
Pinning - SOT23, simplified outline and symbol
Description
gate (g)
source (s)
drain (d)
M3D088
1.1 Description
1.2 Features
1.3 Applications
1.4 Quick reference data
N-channel enhancement mode field-effect transistor in a plastic package using
TrenchMOS™ technology.
Product availability:
PMV40UN in SOT23.
PMV40UN
TrenchMOS™ ultra low level FET
Rev. 01 — 05 August 2003
Ultra low level threshold
Battery management
V
P
DS
tot
1.9 W
30 V
Simplified outline
Top view
1
SOT23
3
MSB003
2
Symbol
Surface mount package.
High-speed switch.
I
R
D
DSon
4.9 A
47 m .
MBB076
g
d
s
Product data

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PMV40UN,215 Summary of contents

Page 1

PMV40UN TrenchMOS™ ultra low level FET Rev. 01 — 05 August 2003 M3D088 1. Product profile 1.1 Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. Product availability: PMV40UN in SOT23. 1.2 Features Ultra low level ...

Page 2

Philips Semiconductors 3. Ordering information Table 2: Ordering information Type number Package Name Description PMV40UN - plastic surface mounted package; 3 leads 4. Limiting values Table 3: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol ...

Page 3

Philips Semiconductors 120 P der (%) 100 P tot P = ---------------------- - 100% der P tot 25 C Fig 1. Normalized total power dissipation as a function of solder point temperature ...

Page 4

Philips Semiconductors 5. Thermal characteristics Table 4: Thermal characteristics Symbol Parameter R thermal resistance from junction to solder point th(j-sp) 5.1 Transient thermal impedance th(j-sp) (K/W) = 0.5 0.2 10 0.1 0.05 0.02 single pulse 1 10 ...

Page 5

Philips Semiconductors 6. Characteristics Table 5: Characteristics unless otherwise specified. j Symbol Parameter Static characteristics V drain-source breakdown voltage (BR)DSS V gate-source threshold voltage GS(th) I drain-source leakage current DSS I gate-source leakage current GSS R ...

Page 6

Philips Semiconductors 20 4.5 V 2 Fig 5. Output characteristics: drain current as a function of drain-source voltage; typical values ...

Page 7

Philips Semiconductors 1 V GS(th) (V) 0.8 typ 0.6 min 0.4 0 Fig 9. Gate-source threshold voltage as a function of junction temperature. (pF ...

Page 8

Philips Semiconductors ( 150 0 and 150 Fig 12. Source ...

Page 9

Philips Semiconductors 7. Package outline Plastic surface mounted package; 3 leads DIMENSIONS (mm are the original dimensions UNIT max. 1.1 0.48 0.15 mm 0.1 0.9 0.38 0.09 OUTLINE VERSION ...

Page 10

Philips Semiconductors 8. Revision history Table 6: Revision history Rev Date CPCN Description 01 20030805 - Product data (9397 750 11668). 9397 750 11668 Product data TrenchMOS™ ultra low level FET Rev. 01 — 05 August 2003 PMV40UN © Koninklijke ...

Page 11

Philips Semiconductors Philips Semiconductors 9. Data sheet status [1] Level Data sheet status Product status I Objective data Development II Preliminary data Qualification III Product data Production [1] Please consult the most recently issued data sheet before initiating or completing ...

Page 12

Philips Semiconductors Contents 1 Product profi 1.1 Description . . . . . ...

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