FCA22N60N Fairchild Semiconductor, FCA22N60N Datasheet

MOSFET N-CH 600V 22A TO-3PN

FCA22N60N

Manufacturer Part Number
FCA22N60N
Description
MOSFET N-CH 600V 22A TO-3PN
Manufacturer
Fairchild Semiconductor
Series
SupreMOS™r
Datasheet

Specifications of FCA22N60N

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
165 mOhm @ 11A, 10V
Drain To Source Voltage (vdss)
600V
Current - Continuous Drain (id) @ 25° C
22A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
45nC @ 10V
Input Capacitance (ciss) @ Vds
1950pF @ 100V
Power - Max
205W
Mounting Type
Through Hole
Package / Case
TO-3PN
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.14 Ohms
Forward Transconductance Gfs (max / Min)
22 S
Drain-source Breakdown Voltage
650 V
Continuous Drain Current
22 A
Power Dissipation
205 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

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©2009 Fairchild Semiconductor Corporation
FCA22N60N Rev. A2
MOSFET Maximum Ratings
Thermal Characteristics
*Drain current limited by maximum junction temperature
V
V
I
I
E
I
E
dv/dt
P
T
T
R
R
R
D
DM
AR
FCA22N60N
N-Channel MOSFET
600V, 22A, 0.165
Features
• R
• BV
• Ultra Low Gate Charge ( Typ. Qg = 45nC)
• Low Effective Output Capacitance
• 100% Avalanche Tested
• RoHS Compliant
J
L
DSS
GSS
AS
AR
D
, T
JC
JS
JA
Symbol
Symbol
STG
DS(on)
DSS
>650V @ T
= 0.140
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
MOSFET dv/dt
Power Dissipation
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
Thermal Resistance, Junction to Case
Thermal Resistance, Case to Heat Sink (Typical)
Thermal Resistance, Junction to Ambient
( Typ.)@ V
J
= 150
o
G
C
GS
D
S
= 10V, I
D
T
= 11A
C
= 25
Parameter
Parameter
Continuous (T
Continuous (T
Pulsed
(T
Derate above 25
TO-3PN
C
o
C unless otherwise noted*
= 25
D
o
C)
C
C
= 25
= 100
o
C
1
o
Description
The SupreMOS MOSFET, Fairchild’s next generation of high
voltage super-junction MOSFETs, employs a deep trench filling
process that differentiates it from preceding multi-epi based tech-
nologies. By utilizing this advanced technology and precise pro-
cess control, SupreMOS provides world class Rsp, superior
switching performance and ruggedness.
This SupreMOS MOSFET fits the industry’s AC-DC SMPS
requirements for PFC, server/telecom power, FPD TV power,
ATX power, and industrial power applications.
C)
o
C)
(Note 1)
(Note 2)
(Note 3)
G
FCA22N60N
FCA22N60N
-55 to +150
13.8
2.75
1.64
600
±30
672
100
205
300
0.61
0.24
7.3
22
66
20
40
S
D
SupreMOS
www.fairchildsemi.com
July 2009
Units
W/
Units
o
V/ns
mJ
mJ
C/W
o
o
W
V
V
A
A
A
C
C
o
C
tm
TM

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FCA22N60N Summary of contents

Page 1

... R Thermal Resistance, Case to Heat Sink (Typical Thermal Resistance, Junction to Ambient JA ©2009 Fairchild Semiconductor Corporation FCA22N60N Rev. A2 Description = 10V 11A The SupreMOS MOSFET, Fairchild’s next generation of high D voltage super-junction MOSFETs, employs a deep trench filling process that differentiates it from preceding multi-epi based tech- nologies ...

Page 2

... Reverse Recovery Time rr Q Reverse Recovery Charge rr Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature 7.3A Starting 22A, di/dt 200A 380V, Starting Essentially Independent of Operating Temperature Typical Characteristics FCA22N60N Rev Package Reel Size TO-3PN - Test Conditions I = 1mA 0V 1mA 0V 1mA, Referenced to 25 ...

Page 3

... Figure 5. Capacitance Characteristics 1E5 C iss = oss = oss C rss = C gd 10000 C iss 1000 C rss 100 10 *Note 1MHz 1 0 Drain-Source Voltage [V] DS FCA22N60N Rev. A2 Figure 2. Transfer Characteristics 100 = V 15 10 7.0 V 6.0 V 5 Figure 4. Body Diode Forward Voltage 100 20V GS o *Note ...

Page 4

... Limited by R DS(on) *Notes: 0 Single Pulse 0. Drain-Source Voltage [ 0.5 0.2 0.1 0.1 0.05 0.02 0.01 Single pulse 0. FCA22N60N Rev. A2 (Continued) Figure 8. On-Resistance Variation 3.0 2.5 2.0 1.5 1.0 *Notes: 0 1mA D 0.0 100 150 200 Figure 10. Maximum Drain Current 10 s 100 s ...

Page 5

... FCA22N60N Rev. A2 Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms 5 www.fairchildsemi.com ...

Page 6

... FCA22N60N Rev. A2 Peak Diode Recovery dv/dt Test Circuit & Waveforms + + • • • I • www.fairchildsemi.com ...

Page 7

... Mechanical Dimensions FCA22N60N Rev. A2 TO-3PN 7 Dimensions in Millimeters www.fairchildsemi.com ...

Page 8

... Definition of Terms Datasheet Identification Product Status Advance Information Formative / In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production FCA22N60N Rev. A2 F-PFS™ PowerTrench ® FRFET PowerXS™ SM Global Power Resource Programmable Active Droop™ ® Green FPS™ QFET Green FPS™ ...

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