FCA20N60F Fairchild Semiconductor, FCA20N60F Datasheet

MOSFET N-CH 600V 20A TO-3PN

FCA20N60F

Manufacturer Part Number
FCA20N60F
Description
MOSFET N-CH 600V 20A TO-3PN
Manufacturer
Fairchild Semiconductor
Series
SuperFET™r
Datasheet

Specifications of FCA20N60F

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
190 mOhm @ 10A, 10V
Drain To Source Voltage (vdss)
600V
Current - Continuous Drain (id) @ 25° C
20A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
98nC @ 10V
Input Capacitance (ciss) @ Vds
3080pF @ 25V
Power - Max
208W
Mounting Type
Through Hole
Package / Case
TO-3PN-3
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.19 Ohm @ 10 V
Forward Transconductance Gfs (max / Min)
17 S
Drain-source Breakdown Voltage
600 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
20 A
Power Dissipation
208000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FCA20N60F
Manufacturer:
FAIRCHILD
Quantity:
12 500
Part Number:
FCA20N60F
Manufacturer:
FAIRCHILD
Quantity:
8 000
©2008 Fairchild Semiconductor Corporation
FCA20N60F Rev. A1
FCA20N60F
600V N-CHANNEL FRFET
Features
• 650V @T
• Typ. Rds(on)=0.15Ω
• Fast Recovery Type ( t
• Ultra low gate charge (typ. Qg=75nC)
• Low effective output capacitance (typ. Coss.eff=165pF)
• 100% avalanche tested
Absolute Maximum Ratings
Thermal Characteristics
* When mounted on the minimum pad size recommended (PCB Mount)
• RoHS Compliant
V
I
I
V
E
I
E
dv/dt
P
T
T
R
R
D
DM
AR
J,
L
DSS
GSS
AS
AR
D
Symbol
Symbol
θJC
θJA
T
STG
J
= 150°C
Drain-Source Voltage
Drain Current
Drain Current
Gate-Source voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Operating and Storage Temperature Range
rr
G
= 160ns )
D
S
- Continuous (T
- Continuous (T
- Pulsed
(T
- Derate above 25°C
Parameter
Parameter
C
= 25°C)
TO-3PN
FCA Series
C
C
= 25°C)
= 100°C)
1
Description
SuperFET
voltage MOSFET family that is utilizing an advanced charge
balance mechanism for outstanding low on-resistance and
lower gate charge performance.
This advanced technology has been tailored
conduction loss, provide superior switching performance, and
withstand extreme dv/dt rate and higher avalanche energy.
Consequently, SuperFET is very suitable for various AC/DC
power conversion in switching mode operation for system
miniaturization and higher efficiency.
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
TM
is, Fairchild’s proprietary, new generation of high
G
FCA20N60F
FCA20N60F
-55 to +150
12.5
± 30
20.8
1.67
600
690
208
300
20
60
20
50
0.6
40
D
S
SuperFET
December 2008
www.fairchildsemi.com
to minimize
Unit
W/°C
V/ns
Unit
°C/W
°C/W
mJ
mJ
°C
°C
W
V
A
A
A
V
A
TM

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FCA20N60F Summary of contents

Page 1

... Thermal Resistance, Junction-to-Case θJC R Thermal Resistance, Junction-to-Ambient θJA * When mounted on the minimum pad size recommended (PCB Mount) ©2008 Fairchild Semiconductor Corporation FCA20N60F Rev. A1 Description TM SuperFET voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. ...

Page 2

... G J ≤ 20A, di/dt ≤ 1200A/μs, V ≤ Starting DSS 4. Pulse Test: Pulse width ≤ 300μs, Duty Cycle ≤ Essentially Independent of Operating Temperature Typical Characteristics FCA20N60F Rev. A1 Package Reel Size TO-3PN -- T = 25°C unless otherwise noted C Conditions 250μ 25° ...

Page 3

... I , Drain Current [A] D Figure 5. Capacitance Characteristics 10000 9000 8000 7000 6000 C oss 5000 4000 C iss 3000 2000 C 1000 rss Drain-Source Voltage [V] DS FCA20N60F Rev. A1 Figure 2. Transfer Characteristics Notes : 10 μ 1. 250 s Pulse Test Figure 4. Body Diode Forward Voltage 10V 20V Note : ...

Page 4

... DS(on Notes : 150 Single Pulse - Drain-Source Voltage [V] DS Figure 11. Transient Thermal Response Curve FCA20N60F Rev. A1 (Continued) Figure 8. On-Resistance Variation 3.0 2.5 2.0 1.5 1.0 * Notes : μ 250 A 0.5 D 0.0 100 150 200 -100 o C] Figure 10. Maximum Drain Current 25 20 μ 100 ...

Page 5

... Unclamped Inductive Switching Test Circuit & Waveforms FCA20N60F Rev. A1 Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms 5 www.fairchildsemi.com ...

Page 6

... FCA20N60F Rev. A1 Peak Diode Recovery dv/dt Test Circuit & Waveforms 6 www.fairchildsemi.com ...

Page 7

... Mechanical Dimensions FCA20N60F Rev. A1 TO-3PN 7 Dimensions in Millimeters www.fairchildsemi.com ...

Page 8

... Definition of Terms Datasheet Identification Product Status Advance Information Formative / In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production FCA20N60F Rev. A1 ® FRFET Programmable Active Droop™ SM ® Global Power Resource QFET Green FPS™ QS™ Green FPS™ e-Series™ ...

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