This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been special tailored to minimize the on-state resistance and yet maintain superior switching performance
This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been special tailored to minimize the on-state resistance and yet maintain superior switching performance
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance
... Drain Current [A] D Figure 5. Capacitance Characteristics 30000 C iss = oss = rss = C gd 24000 C iss 18000 12000 C oss 6000 C rss Drain-Source Voltage [V] DS FDA8440 Rev. A2 Figure 2. Transfer Characteristics 400 100 = V 10 7.0 V 5.0 V 3 250 μ s Pulse Test Figure 4. Body Diode Forward Voltage ...
... Definition of Terms Datasheet Identification Product Status Advance Information Formative / In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production FDA8440 Rev. A2 FPS™ PDP SPM™ F-PFS™ Power-SPM™ ® FRFET PowerTrench SM Global Power Resource Programmable Active Droop™ ...