IRFZ48RSPBF Vishay, IRFZ48RSPBF Datasheet

MOSFET N-CH 60V 50A D2PAK

IRFZ48RSPBF

Manufacturer Part Number
IRFZ48RSPBF
Description
MOSFET N-CH 60V 50A D2PAK
Manufacturer
Vishay
Datasheets

Specifications of IRFZ48RSPBF

Transistor Polarity
N-Channel
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
18 mOhm @ 43A, 10V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
50A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
110nC @ 10V
Input Capacitance (ciss) @ Vds
2400pF @ 25V
Power - Max
190W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Minimum Operating Temperature
- 55 C
Configuration
Single
Resistance Drain-source Rds (on)
0.018 Ohm @ 10 V
Drain-source Breakdown Voltage
60 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
50 A
Power Dissipation
190000 mW
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Continuous Drain Current Id
50A
Drain Source Voltage Vds
60V
On Resistance Rds(on)
18mohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
4V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
*IRFZ48RSPBF

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRFZ48RSPBF
Manufacturer:
FREESCALE
Quantity:
1 000
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V
c. I
d. 1.6 mm from case.
e. Current limited by the package, (die current = 72 A).
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91296
S10-2695-Rev. B, 29-Nov-10
I
2
PRODUCT SUMMARY
V
R
Q
Q
Q
Configuration
ORDERING INFORMATION
Package
Lead (Pb)-free and Halogen-free
Lead (Pb)-free
SnPb
ABSOLUTE MAXIMUM RATINGS (T
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Linear Derating Factor
Single Pulse Avalanche Energy
Maximum Power Dissipation
Peak Diode Recovery dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
Mounting Torque
PAK
DS
DS(on)
g
gs
gd
SD
DD
(Max.) (nC)
(nC)
(V)
(nC)
 72 A, dI/dt  200 A/μs, V
= 25 V, Starting T
(TO-262)
()
G
D
S
G
a, e
D
2
D
J
PAK (TO-263)
= 25 °C, L = 22 μH, R
S
e
c, e
b, e
DD
V
GS
 V
= 10 V
DS
, T
G
IRFZ48RS, IRFZ48RL, SiHFZ48RS, SiHFZ48RL
J
Single
 175 °C.
110
N-Channel MOSFET
60
29
36
g
D
SiHFZ48RS-GE3
IRFZ48RSPbF
SiHFZ48RS-E3
IRFZ48RS
SiHFZ48RS
= 25 , I
2
d
C
PAK (TO-263)
= 25 °C, unless otherwise noted)
Power MOSFET
D
S
0.018
V
GS
AS
6-32 or M3 screw
at 10 V
= 72 A (see fig. 12).
T
for 10 s
C
= 25 °C
T
T
C
C
= 100 °C
= 25 °C
FEATURES
• Halogen-free According to IEC 61249-2-21
• Advanced Process Technology
• Dynamic dV/dt
• 175 °C Operating Temperature
• Fast Switching
• Fully Avalanche Rated
• Drop in Replacement of the IRFZ48, SiHFZ48 for
• Compliant to RoHS Directive 2002/95/EC
DESCRIPTION
Advanced Power MOSFETs from Vishay utilize advanced
processing
on-resistance per silicon area. This benefit, combined with
the fast switching speed and ruggedized device design that
Power MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use in a
wide variety of applications.
The D
accommodating die sizes up to HEX-4. It provides the
highest
on-resistance in any existing surface mount package. The
D
its low internal connection resistance and can dissipate up
to 2 W in a typical surface mount application.
2
Definition
Linear/Audio Applications
PAK is suitable for high current applications because of
2
PAK is a surface mount power package capable of
power
SYMBOL
T
dV/dt
J
V
V
E
I
, T
P
techniques
DM
I
GS
DS
AS
D
D
stg
capability
I
-
IRFZ48RLPbF
SiHFZ48RL-E3
-
-
2
PAK (TO-262)
to
- 55 to + 175
and
LIMIT
300
± 20
290
100
190
1.3
4.5
1.1
achieve
60
50
50
10
Vishay Siliconix
d
the
lowest
extremely
www.vishay.com
lbf · in
UNIT
W/°C
N · m
V/ns
possible
mJ
°C
W
V
A
low
1

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IRFZ48RSPBF Summary of contents

Page 1

... HEX-4. It provides the highest on-resistance in any existing surface mount package. The 2 D PAK is suitable for high current applications because of its low internal connection resistance and can dissipate typical surface mount application PAK (TO-263) SiHFZ48RS-GE3 IRFZ48RSPbF SiHFZ48RS-E3 IRFZ48RS SiHFZ48RS = 25 °C, unless otherwise noted ° 100 ° ...

Page 2

... IRFZ48RS, IRFZ48RL, SiHFZ48RS, SiHFZ48RL Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient Case-to-Sink, Flat, Greased Surface Maximum Junction-to-Case (Drain) SPECIFICATIONS ( °C, unless otherwise noted) J PARAMETER Static Drain-Source Breakdown Voltage V Temperature Coefficient DS Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current ...

Page 3

... Fig Typical Output Characteristics Fig Typical Output Characteristics Document Number: 91296 S10-2695-Rev. B, 29-Nov-10 IRFZ48RS, IRFZ48RL, SiHFZ48RS, SiHFZ48RL 2.5 2.0 1.5 1.0 0.5 0.0 Fig Normalized On-Resistance vs. Temperature Vishay Siliconix Fig Typical Transfer Characteristics I = 72A -60 -40 - 100 120 140 160 180 ° Junction Temperature ( C) J www ...

Page 4

... IRFZ48RS, IRFZ48RL, SiHFZ48RS, SiHFZ48RL Vishay Siliconix Fig Typical Capacitance vs. Drain-to-Source Voltage Fig Typical Gate Charge vs. Gate-to-Source Voltage www.vishay.com 4 Fig Typical Source-Drain Diode Forward Voltage 1000 OPERATION IN THIS AREA LIMITED BY R DS(on) 10us 100 100us 1ms 10 10ms = 25 C ° ° 175 C J Single Pulse 1 0 ...

Page 5

... RESPONSE) 0.01 0.00001 0.0001 Fig Maximum Effective Transient Thermal Impedance, Junction-to-Case Document Number: 91296 S10-2695-Rev. B, 29-Nov-10 IRFZ48RS, IRFZ48RL, SiHFZ48RS, SiHFZ48RL 125 150 175 ° 0.001 0. Rectangular Pulse Duration (sec) 1 Vishay Siliconix D.U. Pulse width ≤ 1 µs Duty factor ≤ 0.1 % Fig ...

Page 6

... IRFZ48RS, IRFZ48RL, SiHFZ48RS, SiHFZ48RL Vishay Siliconix D.U. 0.01 Ω Fig. 12a - Unclamped Inductive Test Circuit Fig. 12c - Maximum Avalanche Energy vs. Drain Current Charge Fig. 13a - Maximum Avalanche Energy vs. Drain Current www.vishay.com Driver + - 250 TOP 200 BOTTOM 150 100 100 125 Starting T , Junction Temperature ( C) ...

Page 7

... Re-applied voltage Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91296. ...

Page 8

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

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