IRFZ48RSPBF Vishay, IRFZ48RSPBF Datasheet - Page 2

• Manufacturer Part Number: IRFZ48RSPBF
• Description: MOSFET N-CH 60V 50A D2PAK
• Manufacturer: Vishay

Specifications of IRFZ48RSPBF

• Transistor Polarity: N-Channel
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 18 mOhm @ 43A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 50A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 110nC @ 10V
• Input Capacitance (ciss) @ Vds: 2400pF @ 25V
• Power - Max: 190W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Resistance Drain-source Rds (on): 0.018 Ohm @ 10 V
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 50 A
• Power Dissipation: 190000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: 50A
• Drain Source Voltage Vds: 60V
• On Resistance Rds(on): 18mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 4V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: *IRFZ48RSPBF

IRFZ48RS, IRFZ48RL, SiHFZ48RS, SiHFZ48RL
Vishay Siliconix
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width  300 μs; duty cycle  2 %.
c. Current limited by the package, (die current = 72 A).
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2
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum Junction-to-Ambient
Case-to-Sink, Flat, Greased Surface
Maximum Junction-to-Case (Drain)
SPECIFICATIONS (T
PARAMETER
Static
Drain-Source Breakdown Voltage
V
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulsed Diode Forward Current
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Forward Turn-On Time
DS
Temperature Coefficient
J
= 25 °C, unless otherwise noted)
a
SYMBOL
SYMBOL
V
R
V
t
t
C
R
R
I
I
C
R
V
DS(on)
C
Q
Q
V
GS(th)
d(off)
I
GSS
DSS
d(on)
Q
DS
g
Q
L
t
L
SM
t
I
t
t
on
thCS
DS
oss
SD
thJA
thJC
iss
rss
S
gs
gd
rr
fs
r
f
D
S
g
rr
/T
J
T
Between lead,
6 mm (0.25") from
package and center of
die contact
MOSFET symbol
showing the
integral reverse
p - n junction diode
V
V
R
J
GS
GS
g
= 25 °C, I
V
Intrinsic turn-on time is negligible (turn-on is dominated by L
T
= 9.1 , R
DS
Reference to 25 °C, I
= 10 V
= 10 V
J
= 25 °C, I
= 48 V, V
f = 1.0 MHz, see fig. 5
V
V
V
V
V
TYP.
TEST CONDITIONS
0.50
DS
GS
DS
DS
DD
-
-
F
= V
= 0 V, I
= 25 V, I
V
= 60 V, V
= 30 V, I
= 72 A, dI/dt = 100 A/μs
D
V
V
GS
DS
= 0.34 , see fig. 10
S
GS
GS
GS
I
D
= 72 A, V
= ± 20 V
see fig. 6 and 13
= 25 V,
, I
= 0 V, T
= 0 V,
= 72 A, V
D
D
D
D
= 250 μA
= 250 μA
GS
I
= 43 A
D
= 72 A,
D
= 0 V
= 43 A
J
GS
= 1 mA
= 150 °C
DS
G
G
b
= 0 V
c
= 48 V,
b
c
b, c
b
MAX.
D
S
b, c
D
S
0.8
62
b, c
-
MIN.
2.0
60
27
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
S10-2695-Rev. B, 29-Nov-10
Document Number: 91296
TYP.
2400
1300
0.60
0.50
190
250
210
250
120
8.1
4.5
7.5
-
-
-
-
-
-
-
-
-
-
-
-
-
UNIT
°C/W
MAX.
± 100
0.018
0.80
250
110
290
180
50
4.0
2.0
S
25
29
36
-
-
-
-
-
-
-
-
-
-
-
-
and L
c
D
UNIT
V/°C
)
nC
nH
μC
nA
μA
pF
ns
ns

S
A
V
V
V