IRFZ48RSPBF Vishay, IRFZ48RSPBF Datasheet - Page 6

• Manufacturer Part Number: IRFZ48RSPBF
• Description: MOSFET N-CH 60V 50A D2PAK
• Manufacturer: Vishay

Specifications of IRFZ48RSPBF

• Transistor Polarity: N-Channel
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 18 mOhm @ 43A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 50A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 110nC @ 10V
• Input Capacitance (ciss) @ Vds: 2400pF @ 25V
• Power - Max: 190W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Resistance Drain-source Rds (on): 0.018 Ohm @ 10 V
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 50 A
• Power Dissipation: 190000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: 50A
• Drain Source Voltage Vds: 60V
• On Resistance Rds(on): 18mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 4V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: *IRFZ48RSPBF

IRFZ48RS, IRFZ48RL, SiHFZ48RS, SiHFZ48RL
Vishay Siliconix
www.vishay.com
6
Fig. 13a - Maximum Avalanche Energy vs. Drain Current
Fig. 12a - Unclamped Inductive Test Circuit
10 V
R
V
g
20 V
G
V
DS
Q
t
p
GS
I
AS
D.U.T.
0.01 Ω
L
Charge
Q
Q
GD
G
Fig. 12c - Maximum Avalanche Energy vs. Drain Current
15 V
250
200
150
100
Driver
50
0
25
+
- V
Starting T , Junction Temperature ( C)
A
DD
50
J
75
100
125
TOP
BOTTOM
Fig. 12b - Unclamped Inductive Waveforms
I
AS
150
12 V
Fig. 13b - Gate Charge Test Circuit
V
GS
Same type as D.U.T.
I D
Current regulator
29A
51A
72A
°
175
0.2 µF
Current sampling resistors
3 mA
50 kΩ
0.3 µF
t
p
I
G
S10-2695-Rev. B, 29-Nov-10
Document Number: 91296
D.U.T.
V
I
D
DS
+
-
V
DS