IRFZ48R Vishay, IRFZ48R Datasheet
IRFZ48R
Specifications of IRFZ48R
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IRFZ48R Summary of contents
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... C SYMBOL ° 100 ° °C C dV/dt T for screw = 25 Ω (see fig. 12 ≤ 175 °C. J This datasheet is subject to change without notice. IRFZ48R, SiHFZ48R Vishay Siliconix RoHS* COMPLIANT techniques to achieve extremely LIMIT UNIT ± 290 DM 1.3 W/°C ...
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... IRFZ48R, SiHFZ48R Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient Case-to-Sink, Flat, Greased Surface Maximum Junction-to-Case (Drain) SPECIFICATIONS ( °C, unless otherwise noted) J PARAMETER Static Drain-Source Breakdown Voltage V Temperature Coefficient DS Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current Drain-Source On-State Resistance ...
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... THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT Fig Typical Transfer Characteristics 2 2.0 1.5 1.0 0.5 0.0 -60 -40 -20 0 Fig Normalized On-Resistance vs. Temperature This datasheet is subject to change without notice. IRFZ48R, SiHFZ48R Vishay Siliconix 72A V = 10V 100 120 140 160 180 ° Junction Temperature ( C) J www.vishay.com www.vishay.com/doc?91000 ...
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... IRFZ48R, SiHFZ48R Vishay Siliconix Fig Typical Capacitance vs. Drain-to-Source Voltage Fig Typical Gate Charge vs. Gate-to-Source Voltage www.vishay.com 4 THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT Fig Typical Source-Drain Diode Forward Voltage 1000 100 Single Pulse 1 0.1 Fig Maximum Safe Operating Area This datasheet is subject to change without notice ...
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... Fig. 10a - Switching Time Test Circuit 150 175 10 % ° Fig. 10b - Switching Time Waveforms Notes: 1. Duty factor Peak 0.001 0.01 0 Rectangular Pulse Duration (sec) 1 This datasheet is subject to change without notice. IRFZ48R, SiHFZ48R Vishay Siliconix D.U. Pulse width ≤ 1 µs Duty factor ≤ 0 ...
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... IRFZ48R, SiHFZ48R Vishay Siliconix Vary t to obtain p required I AS D.U 0.01 Ω Fig. 12a - Unclamped Inductive Test Circuit Fig. 12c - Maximum Avalanche Energy vs. Drain Current Charge Fig. 13a - Basic Gate Charge Waveform www.vishay.com 6 THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT ...
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... D.U.T. - device under te t P.W. Period D = Period P.W. waveform D Body diode forward current dI/dt waveform D Diode recovery dV/dt Body diode forward drop Ripple ≤ for logic level device Fig For N-Channel This datasheet is subject to change without notice. IRFZ48R, SiHFZ48R Vishay Siliconix + + www.vishay.com www.vishay.com/doc?91000 7 ...
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