FDA24N50 Fairchild Semiconductor, FDA24N50 Datasheet

MOSFET N-CH 500V 24A TO-3PN

FDA24N50

Manufacturer Part Number
FDA24N50
Description
MOSFET N-CH 500V 24A TO-3PN
Manufacturer
Fairchild Semiconductor
Series
UniFET™r
Datasheet

Specifications of FDA24N50

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
190 mOhm @ 12A, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
24A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
85nC @ 10V
Input Capacitance (ciss) @ Vds
4150pF @ 25V
Power - Max
270W
Mounting Type
Through Hole
Package / Case
TO-3PN-3
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.19 Ohm @ 10 V
Drain-source Breakdown Voltage
500 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
24 A
Power Dissipation
270000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

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©2010 Fairchild Semiconductor Corporation
FDA24N50 Rev. B
MOSFET Maximum Ratings
Thermal Characteristics
V
V
I
I
E
I
E
dv/dt
P
T
T
R
R
R
D
DM
AR
FDA24N50
N-Channel MOSFET
500V, 24A, 0.19
Features
• R
• Low gate charge ( Typ. 65nC)
• Low C
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• RoHS compliant
J
L
DSS
GSS
AS
AR
D
JC
CS
JA
, T
Symbol
Symbol
STG
DS(on)
rss
= 0.16 ( Typ.)@ V
( Typ. 35pF)
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
Thermal Resistance, Junction to Case
Thermal Resistance, Case to Sink Typ.
Thermal Resistance, Junction to Ambient
G
D
S
GS
= 10V, I
TO-3PN
D
= 12A
T
C
= 25
Parameter
Parameter
-Continuous (T
-Continuous (T
- Pulsed
(T
- Derate above 25
C
o
C unless otherwise noted
= 25
o
C)
C
C
= 25
= 100
1
o
C
o
Description
These N-Channel enhancement mode power field effect transis-
tors are produced using Fairchild’s proprietary, planar stripe,
DMOS technology.
This advance technology has been especially tailored to mini-
mize on-state resistance, provide superior switching perfor-
mance, and withstand high energy pulse in the avalanche and
commutation mode. These devices are well suited for high effi-
cient switching mode power supplies and active power factor
correction.
C)
o
C)
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
G
-55 to +150
Ratings
Ratings
1872
500
±30
270
300
0.46
0.24
2.2
4.5
S
24
14
96
27
D
24
40
November 2010
UniFET
www.fairchildsemi.com
Units
W/
Units
o
V/ns
mJ
mJ
C/W
o
o
W
V
V
A
A
A
C
C
o
C
TM

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FDA24N50 Summary of contents

Page 1

... R Thermal Resistance, Case to Sink Typ. CS R Thermal Resistance, Junction to Ambient JA ©2010 Fairchild Semiconductor Corporation FDA24N50 Rev. B Description = 12A These N-Channel enhancement mode power field effect transis- D tors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advance technology has been especially tailored to mini- ...

Page 2

... Starting 24A, di/dt  200A/s, V  Starting DSS 4. Pulse Test: Pulse width  300s, Duty Cycle  Essentially Independent of Operating Temperature Typical Characteristics FDA24N50 Rev. B Package Reel Size TO-3PN - unless otherwise noted C Test Conditions I = 250A, V ...

Page 3

... I , Drain Current [A] D Figure 5. Capacitance Characteristics 7500 C iss = oss = rss = C gd 6000 4500 3000 1500 0 0 Drain-Source Voltage [V] DS FDA24N50 Rev. B Figure 2. Transfer Characteristics 100 10 *Notes: 1. 250  s Pulse Test Figure 4. Body Diode Forward Voltage 150 100 20V GS o *Note: T ...

Page 4

... Operation in This Area 1 is Limited by R DS(on) 0.1 0. Drain-Source Voltage [ 0.5 0.1 0.2 0.1 0.05 0.01 0.02 0.01 Single pulse 0.001 -5 10 FDA24N50 Rev. B (Continued) Figure 8. On-Resistance Variation 3.0 2.5 2.0 1.5 1.0 *Notes: 0 250  0.0 -75 75 125 175 Figure 10 ...

Page 5

... FDA24N50 Rev. B Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms 5 www.fairchildsemi.com ...

Page 6

... Driver ) ( Driver ) DUT ) ( DUT ) DUT ) ( DUT ) FDA24N50 Rev. B Peak Diode Recovery dv/dt Test Circuit & Waveforms + + DUT DUT Driver Driver Same Type Same Type as DUT as DUT GS GS • dv/dt controlled by R • dv/dt controlled by R • I • I controlled by pulse period controlled by pulse period ...

Page 7

... Mechanical Dimensions FDA24N50 Rev. B TO-3PN 7 Dimensions in Millimeters www.fairchildsemi.com ...

Page 8

... Definition of Terms Datasheet Identification Product Status Advance Information Formative / In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production FDA24N50 Rev. B FPS™ PDP SPM™ F-PFS™ Power-SPM™ ® FRFET PowerTrench SM Global Power Resource Programmable Active Droop™ ...

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