FDA20N50F Fairchild Semiconductor, FDA20N50F Datasheet - Page 4

• Manufacturer Part Number: FDA20N50F
• Description: MOSFET N-CH 500V 22A TO-3PN
• Manufacturer: Fairchild Semiconductor
• Series: UniFET™r

Specifications of FDA20N50F

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 260 mOhm @ 11A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 22A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 65nC @ 10V
• Input Capacitance (ciss) @ Vds: 3390pF @ 25V
• Power - Max: 388W
• Mounting Type: Through Hole
• Package / Case: TO-3PN-3
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.26 Ohm @ 10 V
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 22 A
• Power Dissipation: 388000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FDA20N50F Rev. A
Typical Performance Characteristics
Figure 7. Breakdown Voltage Variation
Figure 9. Maximum Drain Current
1.2
1.1
1.0
0.9
0.8
25
20
15
10
-100
5
0
25
-50
vs. Temperature
50
vs. Case Temperature
T
T
J
C
, Junction Temperature
, Case Temperature
0
75
1E-3
0.01
0.1
1
10
50
0.5
0.05
0.2
0.02
0.01
Single pulse
-5
0.1
100
100
[
Figure 10. Transient Thermal Response Curve
o
*Notes:
C
1. V
2. I
[
]
o
125
C
D
150
10
GS
]
= 250
-4
= 0V
µ
A
200
150
Rectangular Pulse Duration [sec]
(Continued)
10
-3
4
Figure 8. Maximum Safe Operating Area
10
200
100
0.1
10
-2
1
1
Operation in This Area
is Limited by R
*Notes:
1. Z
2. Duty Factor, D=t
3. T
P
DM
θ
JM
JC
- T
(t) = 0.44
V
10
DS
C
= P
t
, Drain-Source Voltage [V]
-1
1
t
10
DS(on)
2
DM
o
C/W Max.
* Z
*Notes:
1
1. T
2. T
3. Single Pulse
/t
θ
2
JC
(t)
C
J
= 150
= 25
10
o
0
C
o
100
C
10ms
100
1ms
DC
www.fairchildsemi.com
µ
s
30
µ
1000
s