FDB2710 Fairchild Semiconductor, FDB2710 Datasheet
FDB2710
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FDB2710 Summary of contents
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... R Thermal Resistance, Junction-to-Ambient θJA *When mounted on the minimum pad size recommended (PCB Mount) ©2006 Fairchild Semiconductor Corporation FDB2710 Rev. A Description • 50A, 250V, R • Fast switching speed • Low gate charge • High performance trench technology for extremely low R • High power and current handling capability ...
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... DD G ≤ 50A, di/dt ≤ 100A/µs, V ≤ Starting DSS 4. Pulse Test: Pulse width ≤ 300µs, Duty Cycle ≤ Essentially Independent of Operating Temperature Typical Characteristics FDB2710 Rev. A Package Reel Size D2-Pak 330mm T = 25°C unless otherwise noted C Conditions 250µA, T ...
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... C = shorted iss oss rss gd 6000 C iss C oss 3000 C rss Drain-Source Voltage [V] DS FDB2710 Rev. A Figure 2. Transfer Characteristics 250 100 10 µ 1. 250 s Pulse Test Figure 4. Body Diode Forward Voltage 150 100 10 = 20V Note : 100 125 150 Figure 6. Gate Charge Characteristics Note: 1 ...
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... Operation in This Area is Limited by R DS(on) * Notes : 0 150 J 3. Single Pulse 0. Drain-Source Voltage 0 0.2 0.1 0.05 0. 0.01 Single pulse - FDB2710 Rev. A (Continued) Figure 8. On-Resistance Variation * Notes : 250 µ 100 150 200 Figure 10. Maximum Drain Current 100 µ s 1ms 100 400 [V] DS Figure 11 ...
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... Unclamped Inductive Switching Test Circuit & Waveforms FDB2710 Rev. A Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms 5 www.fairchildsemi.com ...
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... FDB2710 Rev. A Peak Diode Recovery dv/dt Test Circuit & Waveforms 6 www.fairchildsemi.com ...
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... FDB2710 Rev www.fairchildsemi.com ...
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... PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Preliminary No Identification Needed Obsolete FDB2710 Rev. A OCX™ OCXPro™ ® OPTOLOGIC OPTOPLANAR™ PACMAN™ POP™ Power247™ PowerEdge™ ...