FDB8442 Fairchild Semiconductor, FDB8442 Datasheet - Page 2

• Manufacturer Part Number: FDB8442
• Description: MOSFET N-CH 40V 80A D2PAK
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDB8442

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 2.9 mOhm @ 80A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 80A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 235nC @ 10V
• Input Capacitance (ciss) @ Vds: 12200pF @ 25V
• Power - Max: 254W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.005 Ohm @ 10 V
• Drain-source Breakdown Voltage: 40 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 80 A
• Power Dissipation: 254000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDB8442TR

FDB8442 Rev. A
MOSFET Maximum Ratings
Thermal Characteristics
Package Marking and Ordering Information
Electrical Characteristics
Off Characteristics
On Characteristics
Dynamic Characteristics
V
V
I
E
P
T
R
R
B
I
I
V
r
C
C
C
R
Q
Q
Q
Q
Q
Symbol
Symbol
D
DSS
GSS
DS(
DSS
GS
AS
D
J
VDSS
GS(th)
θJC
θJA
iss
oss
rss
G
Device Marking
g(TOT)
g(TH)
gs
gs2
gd
, T
on)
STG
FDB8442
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient TO-263, lin
Drain to Source Voltage
Gate to Source Voltage
Drain Current Continuous (T
Drain Current Continuous (T
Pulsed
Single Pulse Avalanche Energy
Power Dissipation
Derate above 25
Operating and Storage Temperature
Drain to Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Gate to Source Threshold Voltage
Drain to Source On Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge at 10V
Threshold Gate Charge
Gate to Source Gate Charge
Gate Charge Threshold to Plateau
Gate to Drain “Miller” Charge
FDB8442
Parameter
Device
o
C
C
amb
<158
T
Parameter
J
= 25
TO-263AB
= 25°C unless otherwise noted
Package
T
o
C
C, V
o
= 25°C unless otherwise noted
C, V
GS
GS
V
I
I
T
I
V
V
V
V
f = 1MHz
V
V
V
D
D
D
= 10V)
J
DS
DS
GS
GS
DS
GS
GS
GS
= 10V, with R
= 80A, V
= 80A, V
= 250µA, V
= 175°C
= V
= 32V
= 0V
= 25V, V
= ±20V
= 0.5V, f = 1MHz
= 0 to 10V
= 0 to 2V
Test Conditions
2
GS
2
Reel Size
, I
copper pad area
330mm
GS
GS
D
GS
GS
= 250µA
= 10V
= 10V,
θJA
= 0V,
= 0V
T
V
I
I
D
g
= 43
J
DD
= 1mA
= 80A
= 150°C
= 20V
(Note 1)
o
C/W)
Tape Width
24mm
Min
40
2
-
-
-
-
-
-
-
-
-
-
-
-
-
-
See Figure 4
-55 to +175
Ratings
12200
1040
Typ
2.9
2.1
3.6
640
181
1.0
0.59
±20
23
49
26
41
720
254
1.7
40
80
28
43
-
-
-
-
www.fairchildsemi.com
±100
Max
250
Quantity
800 units
2.9
5.0
235
30
4
1
-
-
-
-
-
-
-
-
Units
Units
W/
o
o
mΩ
C/W
C/W
µA
nC
nC
nC
nC
nC
mJ
nA
pF
pF
pF
o
V
W
Ω
V
V
V
A
C
o
C