FDB8441 Fairchild Semiconductor, FDB8441 Datasheet - Page 5

• Manufacturer Part Number: FDB8441
• Description: MOSFET N-CH 40V 80A D2PAK
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDB8441

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 2.5 mOhm @ 80A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 80A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 280nC @ 10V
• Input Capacitance (ciss) @ Vds: 15000pF @ 25V
• Power - Max: 300W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0019 Ohms @ 10 V
• Drain-source Breakdown Voltage: 40 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 80 A
• Power Dissipation: 300 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDB8441TR

FDB8441 Rev.A
Typical Characteristics
Figure 5.
1000
4000
100
Figure 9.
0.1
160
120
10
80
40
1
50
40
30
20
10
0
Variation vs Gate to Source Voltage
0
1
2.0
Figure 7.
3
OPERATION IN THIS
AREA MAY BE
LIMITED BY r DS
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
V
V
DD
LIMITED
BY PACKAGE
DS
Forward Bias Safe Operating Area
V
V
2.5
4
, DRAIN TO SOURCE VOLTAGE (V)
= 5V
GS
Drain to Source On-Resistance
GS
, GATE TO SOURCE VOLTAGE (V)
, GATE TO SOURCE VOLTAGE
T
Transfer Characteristics
J
(on)
T
= 25
5
J
3.0
T
= 25
J
o
SINGLE PULSE
T
T
= 175
C
J
C
o
= MAX RATED
C
= 25
6
T
J
o
10
µ
3.5
C
o
= 175
s
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
C
7
o
C
4.0
8
T
J
4.5
10us
10ms
100us
= -55
(
1ms
DC
V
9
)
µ
o
C
s
100
5.0
10
5
NOTE: Refer to Fairchild Application Notes AN7514 and AN7515
Figure 10.
100
500
Figure 6. Unclamped Inductive Switching
10
160
120
1
0.01
80
40
1.8
1.6
1.4
1.2
1.0
0.8
0.6
Resistance vs Junction Temperature
0
Figure 8.
-80
0
If R = 0
t
If R ≠ 0
t
AV
AV
STARTING T
= (L)(I
= (L/R)ln[(I
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
0.1
-40
V
T
t
V
AS
Normalized Drain to Source On
AV
J
DS
, JUNCTION TEMPERATURE
GS
)/(1.3*RATED BV
, TIME IN AVALANCHE (ms)
, DRAIN TO SOURCE VOLTAGE (V)
Saturation Characteristics
V
GS
= 4.5V
1
AS
J
V
= 150
GS
*R)/(1.3*RATED BV
0
= 5V
Capability
1
= 10V
o
C
40
10
µ
DSS
2
STARTING T
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
s
- V
80
DD
DSS
100
)
- V
120
www.fairchildsemi.com
J
DD
3
= 25
(
) +1]
V
o
V
I
V
D
C
GS
GS
1000
GS
= 80A
)
o
160
C
= 3.5V
= 4V
= 10V
µ
5000
s
200
4