FDPF5N50FT Fairchild Semiconductor, FDPF5N50FT Datasheet - Page 4
![MOSFET N-CH 500V 4.5A TO-220F](/photos/5/31/53149/mfg_to-220f_desc_sml.jpg)
FDPF5N50FT
Manufacturer Part Number
FDPF5N50FT
Description
MOSFET N-CH 500V 4.5A TO-220F
Manufacturer
Fairchild Semiconductor
Series
UniFET™r
Datasheet
1.FDPF5N50FT.pdf
(10 pages)
Specifications of FDPF5N50FT
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
1.55 Ohm @ 2.25A, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
4.5A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
8nC @ 10V
Input Capacitance (ciss) @ Vds
700pF @ 25V
Power - Max
28W
Mounting Type
Through Hole
Package / Case
TO-220-3 Full Pack (Straight Leads)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
1.55 Ohm @ 10 V
Drain-source Breakdown Voltage
500 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
4.5 A
Power Dissipation
28000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
FDPF5N50FT
Manufacturer:
Fairchild
Quantity:
5 698
Company:
Part Number:
FDPF5N50FT
Manufacturer:
Fairchi/ON
Quantity:
17 408
Part Number:
FDPF5N50FT
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
FDP5N50F / FDPF5N50FT Rev. A1
Typical Performance Characteristics
Figure 7. Breakdown Voltage Variation
Figure 9. Maximum Safe Operating Area
0.01
1.2
1.1
1.0
0.9
0.8
0.1
10
30
-75
1
1
Operation in This Area
is Limited by R
vs. Temperature
-25
- FDPF5N50FT
T
J
V
, Junction Temperature
DS
, Drain-Source Voltage [V]
10
0.003
DS(on)
0.01
25
0.1
Figure 11. Transient Thermal Response Curve - FDP5N50F
3
1
10
0.1
0.05
0.02
0.01
*Notes:
0.5
0.2
-5
Single pulse
1. T
2. T
3. Single Pulse
DC
75
C
J
10ms
= 150
= 25
100
1ms
10
o
*Notes:
o
C
-4
C
1. V
2. I
[
o
125
100
C
D
GS
]
= 250
µ
= 0V
s
30
10
µ
A
µ
-3
Rectangular Pulse Duration [sec]
175
1000
s
(Continued)
10
-2
4
10
0.01
0.1
Figure 8. Maximum Safe Operating Area
10
-1
30
Figure 10. Maximum Drain Current
4
2
0
1
5
25
1
Operation in This Area
is Limited by R
*Notes:
P
1. Z
2. Duty Factor, D= t
3. T
DM
10
θ
JM
0
50
JC
T
- FDP5N50F
V
C
(t) = 1.4
- T
DS
, Case Temperature
t
C
, Drain-Source Voltage [V]
1
t
= P
10
2
DS(on)
o
DM
10
75
C/W Max.
1
* Z
1
θ
/t
JC
2
(t)
*Notes:
100
1. T
2. T
3. Single Pulse
DC
10
100
10ms
2
C
J
[
o
= 150
= 25
C
1ms
]
125
o
100
C
o
C
µ
s
www.fairchildsemi.com
30
µ
1000
s
150