FDU8780 Fairchild Semiconductor, FDU8780 Datasheet - Page 5

• Manufacturer Part Number: FDU8780
• Description: MOSFET N-CH 25V 35A I-PAK
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDU8780

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 8.5 mOhm @ 35A, 10V
• Drain To Source Voltage (vdss): 25V
• Current - Continuous Drain (id) @ 25° C: 35A
• Vgs(th) (max) @ Id: 2.5V @ 250µA
• Gate Charge (qg) @ Vgs: 29nC @ 10V
• Input Capacitance (ciss) @ Vds: 1440pF @ 13V
• Power - Max: 50W
• Mounting Type: Through Hole
• Package / Case: IPak, TO-251, DPak, VPak (3 straight leads + tab)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 6.5 m Ohms
• Drain-source Breakdown Voltage: 25 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 35 A
• Power Dissipation: 50 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FDD8780/FDU8780 Rev. B
Typical Characteristics
1E-3
0.01
0.1
2
1
10
-5
SINGLE PULSE
DUTY CYCLE-DESCENDING ORDER
D = 0.5
0.2
0.1
0.05
0.02
0.01
10
-4
Figure 13. Transient Thermal Response Curve
T
J
= 25°C unless otherwise noted
t, RECTANGULAR PULSE DURATION(s)
10
-3
5
10
-2
10
NOTES:
DUTY FACTOR: D = t
PEAK T
-1
J
= P
DM
x Z
θJC
P
10
DM
1
/t
x R
2
0
θJC
www.fairchildsemi.com
t
+ T
1
t
2
C
10
1