FDMS6673BZ Fairchild Semiconductor, FDMS6673BZ Datasheet - Page 5

• Manufacturer Part Number: FDMS6673BZ
• Description: MOSFET P-CH 30V 15.2A POWER56
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDMS6673BZ

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 6.8 mOhm @ 15.2A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 15.2A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 130nC @ 10V
• Input Capacitance (ciss) @ Vds: 5915pF @ 15V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: 8-PQFN, Power56
• Configuration: Single Quad Drain Triple Source
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.0068 Ohm @ 10 V
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 25 V
• Continuous Drain Current: 15.2 A
• Power Dissipation: 2500 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDMS6673BZTR

©2009 Fairchild Semiconductor Corporation
FDMS6673BZ Rev C3
Typical Characteristics
2000
1000
0.0004
100
0.001
0.5
10
0.01
1
0.1
10
2
1
10
-4
-4
DUTY CYCLE-DESCENDING ORDER
D = 0.5
0.2
0.1
0.05
0.02
0.01
V
Figure 14.
GS
10
= -10 V
10
-3
-3
Figure 13. Single Pulse Maximum Power Dissipation
T
SINGLE PULSE
R
Junction-to-Ambient Transient Thermal Response Curve
J
JA
= 25 °C unless otherwise noted
= 125
10
10
-2
o
-2
C/W
t, RECTANGULAR PULSE DURATION (sec)
10
t, PULSE WIDTH (sec)
10
-1
-1
5
SINGLE PULSE
R
T
A
JA
= 25
= 125
o
C
1
o
C/W
1
NOTES:
DUTY FACTOR: D = t
PEAK T
10
J
10
= P
DM
x Z
P
JA
DM
1
/t
x R
2
100
JA
100
t
1
+ T
t
2
A
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1000
1000