FDU3N40TU Fairchild Semiconductor, FDU3N40TU Datasheet - Page 4

• Manufacturer Part Number: FDU3N40TU
• Description: MOSFET N-CH 400V 2A IPAK
• Manufacturer: Fairchild Semiconductor
• Series: UniFET™r

Specifications of FDU3N40TU

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 3.4 Ohm @ 1A, 10V
• Drain To Source Voltage (vdss): 400V
• Current - Continuous Drain (id) @ 25° C: 2A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 6nC @ 10V
• Input Capacitance (ciss) @ Vds: 225pF @ 25V
• Power - Max: 30W
• Mounting Type: Through Hole
• Package / Case: IPak, TO-251, DPak, VPak (3 straight leads + tab)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 3.4 Ohm @ 10 V
• Drain-source Breakdown Voltage: 400 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 2 A
• Power Dissipation: 30000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FDD3N40 / FDU3N40 Rev. A
Typical Performance Characteristics
Figure 9. Maximum Safe Operating Area
Figure 7. Breakdown Voltage Variation
10
10
10
10
-1
-2
1
0
10
1.2
1.1
1.0
0.9
0.8
0
-100
vs. Temperature
Operation in This Area
is Limited by R
-50
V
T
DS
J
, Drain-Source Voltage [V]
, Junction Temperature [
DS(on)
10
0
Figure 11. Transient Thermal Response Curve
1
1 0
1 0
-1
1 0
0
-5
50
D = 0 .5
0 .0 2
0 .0 1
0 .0 5
0 .2
0 .1
* Notes :
1. T
2. T
3. Single Pulse
100 ms
100
1 0
C
J
= 150
10 ms
= 25
o
10
DC
C]
-4
2
* Notes :
o
1 ms
C
o
1. V
2. I
s in g le p u ls e
t
C
1
D
, S q u a r e W a v e P u ls e D u r a tio n [s e c ]
GS
= 250
150
= 0 V
100
µ
A
µ
s
10
1 0
µ
-3
s
200
(Continued)
4
1 0
-2
2.5
2.0
1.5
1.0
0.5
0.0
Figure 8. On-Resistance Variation
Figure 10. Maximum Drain Current
25
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-100
1 0
* N o te s :
-1
P
1 . Z
2 . D u ty F a c to r , D = t
3 . T
DM
vs. Case Temperature
θ
J M
J C
-50
50
( t) = 4 .2
- T
C
t
= P
1
T
t
1 0
2
T
vs. Temperature
C
D M
J
, Case Temperature [
o
, Junction Temperature [
0
C /W M a x .
* Z
0
75
1
θ
/t
J C
2
( t)
50
1 0
1
100
o
C]
100
o
C]
125
* Notes :
1. V
2. I
150
D
GS
= 1 A
www.fairchildsemi.com
= 10 V
150
200