FDMC6675BZ Fairchild Semiconductor, FDMC6675BZ Datasheet - Page 3

• Manufacturer Part Number: FDMC6675BZ
• Description: MOSFET P-CH 30V 9.5A POWER33
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDMC6675BZ

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 14.4 mOhm @ 9.5A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 9.5A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 65nC @ 10V
• Input Capacitance (ciss) @ Vds: 2865pF @ 15V
• Power - Max: 2.3W
• Mounting Type: Surface Mount
• Package / Case: 8-MLP, Power33
• Configuration: Single Quad Drain Triple Source
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.0144 Ohm @ 10 V
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 25 V
• Continuous Drain Current: 9.5 A
• Power Dissipation: 2300 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDMC6675BZTR

©2010 Fairchild Semiconductor Corporation
FDMC6675BZ Rev.D3
Typical Characteristics
1.6
1.4
1.2
1.0
0.8
0.6
32
24
16
32
24
16
Figure 3. Normalized On Resistance
8
0
8
0
Figure 1.
0.0
-75
0
Figure 5. Transfer Characteristics
V
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
I
V
D
DS
GS
-50
= -9.5 A
vs Junction Temperature
= -5 V
-V
= -10 V
0.5
DS
T
1
-25
,
J
On Region Characteristics
DRAIN TO SOURCE VOLTAGE (V)
-V
,
JUNCTION TEMPERATURE
GS
V
V
V
V
GS
GS
GS
GS
, GATE TO SOURCE VOLTAGE (V)
1.0
0
= -4 V
= -4.5 V
= -6 V
= -10 V
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
2
T
25
J
P
= 150
1.5
s
50
T
o
J
C
3
= 25 °C unless otherwise noted
2.0
75
T
(
J
o
100 125 150
V
C
= -55
GS
P
)
T
4
s
2.5
J
= -3.5 V
= 25
o
C
o
C
3.0
5
3
0.01
100
0.1
10
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
50
40
30
20
10
0.2
Figure 2.
0
Figure 4.
Forward Voltage vs Source Current
0
vs Drain Current and Gate Voltage
2
Figure 6.
V
V
GS
T
-V
GS
J
= 0 V
SD
= 150
= -3.5 V
0.4
, BODY DIODE FORWARD VOLTAGE (V)
Normalized On-Resistance
-V
On-Resistance vs Gate to
GS
-I
Source Voltage
8
o
4
Source to Drain Diode
D
C
,
,
GATE TO SOURCE VOLTAGE (V)
DRAIN CURRENT (A)
0.6
PULSE DURATION = 80
DUTY CYCLE = 0.5%MAX
16
6
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
0.8
T
J
V
= -55
GS
T
T
24
J
J
= -4 V
T
8
= 125
= 25
J
1.0
V
V
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o
V
I
= 25
GS
D
C
GS
GS
= -9.5 A
P
= -4.5 V
o
= -6 V
s
= -10 V
o
C
o
C
C
P
s
1.2
32
10