FDB14N30TM Fairchild Semiconductor, FDB14N30TM Datasheet - Page 4

• Manufacturer Part Number: FDB14N30TM
• Description: MOSFET N-CH 300V 14A D2PAK
• Manufacturer: Fairchild Semiconductor
• Series: UniFET™r

Specifications of FDB14N30TM

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 290 mOhm @ 7A, 10V
• Drain To Source Voltage (vdss): 300V
• Current - Continuous Drain (id) @ 25° C: 14A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 25nC @ 10V
• Input Capacitance (ciss) @ Vds: 1060pF @ 25V
• Power - Max: 140W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.29 Ohms @ 10 V
• Forward Transconductance Gfs (max / Min): 10.5 S
• Drain-source Breakdown Voltage: 300 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 14 A
• Power Dissipation: 140 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDB14N30TMTR

FDB14N30 Rev. A
Typical Performance Characteristics
Figure 9. Maximum Safe Operating Area
Figure 7. Breakdown Voltage Variation
10
10
10
10
10
-1
-2
2
1
0
10
1.2
1.1
1.0
0.9
0.8
0
-100
Operation in This Area
is Limited by R
vs. Temperature
-50
V
DS(on)
P
T
DS
DM
J
, Drain-Source Voltage [V]
, Junction Temperature [
0
10
1 0
1 0
1 0
1 0
1
1 0
1 0
-1
-1
-2
-2
1 0
1 0
t
0
0
1
Figure 11. Transient Thermal Response Curve
t
2
-5
-5
50
D = 0 .5
D = 0 .5
0 .0 1
0 .0 1
0 .0 2
0 .0 2
0 .0 5
0 .0 5
0 .1
0 .1
0 .2
0 .2
100 ms
100
1 0
1 0
DC
s in g le p u ls e
s in g le p u ls e
o
10 ms
C]
-4
-4
* Notes :
* Notes :
1. T
2. T
3. Single Pulse
10
1. V
2. I
t
t
1 ms
1
1
2
C
J
D
, S q u a r e W a v e P u ls e D u r a tio n [s e c ]
, S q u a r e W a v e P u ls e D u r a tio n [s e c ]
GS
= 150
= 25
= 250
150
= 0 V
100
o
μ
C
o
C
A
μ
s
1 0
1 0
10
-3
-3
μ
200
s
(Continued)
4
1 0
1 0
-2
-2
Figure 10. Maximum Drain Current
15
10
5
0
25
Figure 8. On-Resistance Variation
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-100
1 0
1 0
* N o te s :
* N o te s :
-1
-1
1 . Z
1 . Z
2 . D u ty F a c to r , D = t
2 . D u ty F a c to r , D = t
3 . T
3 . T
P
vs. Case Temperature
θ
θ
J M
J M
DM
50
J C
J C
-50
( t) = 0 .8 9
( t) = 0 .8 9
- T
- T
C
C
= P
= P
T
1 0
1 0
C
vs. Temperature
T
t
, Case Temperature [
1
D M
D M
J
t
, Junction Temperature [
0
0
2
o
o
* Z
* Z
0
C /W M a x .
C /W M a x .
75
1
1
/t
/t
θ
θ
J C
J C
2
2
( t)
( t)
50
1 0
1 0
100
1
1
o
C]
100
o
C]
125
* Notes :
1. V
2. I
150
D
GS
= 7 A
www.fairchildsemi.com
= 10 V
150
200