FDS6675 Fairchild Semiconductor, FDS6675 Datasheet - Page 16
![MOSFET P-CH 30V 11A 8-SOIC](/photos/5/42/54236/261-8-soic_sml.jpg)
FDS6675
Manufacturer Part Number
FDS6675
Description
MOSFET P-CH 30V 11A 8-SOIC
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Datasheet
1.FDS6675.pdf
(5 pages)
Specifications of FDS6675
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
14 mOhm @ 11A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
11A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
42nC @ 5V
Input Capacitance (ciss) @ Vds
3000pF @ 15V
Power - Max
1W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Transistor Polarity
P Channel
Continuous Drain Current Id
11A
Drain Source Voltage Vds
30V
On Resistance Rds(on)
14mohm
Rds(on) Test Voltage Vgs
-10V
Threshold Voltage Vgs Typ
-1.7V
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
FDS6675TR
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same safeguards for sole source products as multi-source products.
We thank you for your attention in this matter. Should you have any questions,
please do not hesitate to contact your Fairchild Semiconductor salesperson.
Sincerely,
Fairchild Semiconductor
c.c.: Celsa Gonzalez
Tom Hudson
Pg. 16