FDFMA2P859T Fairchild Semiconductor, FDFMA2P859T Datasheet - Page 5

• Manufacturer Part Number: FDFMA2P859T
• Description: MOSFET P-CH 20V 3A MICROFET
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDFMA2P859T

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Diode (Isolated)
• Rds On (max) @ Id, Vgs: 120 mOhm @ 3A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 3A
• Vgs(th) (max) @ Id: 1.3V @ 250µA
• Gate Charge (qg) @ Vgs: 6nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 435pF @ 10V
• Power - Max: 700mW
• Mounting Type: Surface Mount
• Package / Case: 6-MLP, 6-MicroFET™
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDFMA2P859TTR

©2009 Fairchild Semiconductor Corporation
FDFMA2P859T Rev.B
Typical Characteristics
10000
Figure 11.
1000
0.01
0.01
0.1
100
0.1
10
10
Figure 7.
5
4
3
2
1
0
1
1
0.1
0
0
I
THIS AREA IS
LIMITED BY r
Figure 9.
D
SINGLE PULSE
T
R
T
= -3.0 A
J
A
T
JA
= MAX RATED
= 25
= 173
-V
5
Schottky Diode Reverse Current
1
o
DS
Gate Charge Characteristics
C
Operating Area
, DRAIN to SOURCE VOLTAGE (V)
o
V
DS(on)
C/W
T
R
T
T
Forward Bias Safe
J
,
Q
J
J
10
REVERSE VOLTAGE (V)
= 125
= 85
g
= 25
, GATE CHARGE (nC)
1
V
2
DD
o
o
o
C
C
= -5 V
C
15
V
T
DD
J
3
= 25 °C unless otherwise noted
= -15 V
20
V
10
DD
= -10 V
4
25
100 us
100 ms
1 ms
10 ms
1 s
10 s
DC
50
30
5
5
Figure 10.
0.01
200
100
0.1
700
600
500
400
300
200
100
0.5
10
10
1
1
10
0
Figure 12.
0
0
-4
Figure 8.
C
rss
10
0.2
T
-3
-V
Schottky Diode Foward Voltage
J
4
= 125
DS
Power Dissipation
to Source Voltage
, DRAIN TO SOURCE VOLTAGE (V)
Capacitance vs Drain
Single Pulse Maximum
10
t, PULSE WIDTH (sec)
C
C
V
oss
iss
-2
o
F
0.4
C
,
FORWARD VOLTAGE (V)
T
10
8
J
= 25
-1
0.6
o
C
1
12
f = 1 MHz
V
SINGLE PULSE
R
T
0.8
A
GS
T
JA
= 25
10
= 0 V
V
= 173
GS
o
C
www.fairchildsemi.com
16
= -10 V
1.0
o
100
C/W
1000
1.2
20