FDS8433A Fairchild Semiconductor, FDS8433A Datasheet - Page 3

• Manufacturer Part Number: FDS8433A
• Description: MOSFET P-CH 20V 5A 8-SOIC
• Manufacturer: Fairchild Semiconductor

Specifications of FDS8433A

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 47 mOhm @ 5A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 5A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 28nC @ 5V
• Input Capacitance (ciss) @ Vds: 1130pF @ 10V
• Power - Max: 1W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Configuration: Single Quad Drain Triple Source
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.047 Ohms
• Forward Transconductance Gfs (max / Min): 16 S
• Drain-source Breakdown Voltage: - 20 V
• Gate-source Breakdown Voltage: +/- 8 V
• Continuous Drain Current: 5 A
• Power Dissipation: 2.5 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Continuous Drain Current Id: 5A
• Drain Source Voltage Vds: 20V
• On Resistance Rds(on): 47mohm
• Rds(on) Test Voltage Vgs: -4.5V
• Threshold Voltage Vgs Typ: -600mV
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDS8433ATR

Typical Characteristics
10
5 0
4 0
3 0
2 0
1 0
8
6
4
2
0
0
0.4
1.6
1.4
1.2
0.8
0.6
0
1
-50
Figure 1. On-Region Characteristics.
V
Figure 5. Transfer Characteristics.
DS
Figure 3. On-Resistance Variation
V
I = -5A
D
GS
= -5V
-25
= -4.5V
1
-V
0.8
-V
GS
V
GS
with Temperature.
DS
T , JUNCTION TEMPERATURE (°C)
0
, GATE TO SOURCE VOLTAGE (V)
J
= -4.5V
, DRAIN-SOURCE VOLTAGE (V)
25
2
-3.5V
1.2
-3.0V
50
T = -55° C
3
J
-2.5V
75
1.6
25°C
100
-2.0V
1 25° C
4
-1.5V
125
150
5
2
0.15
0.12
0.09
0.06
0.03
0.001
0.01
0.1
0
10
1.8
1.6
1.4
1.2
0.8
3
1
1
Figure 6. Body Diode Forward Voltage
2
1
0
with Drain Current and Gate Voltage.
0
V = 0V
Figure 4. On-Resistance Variation
Figure 2. On-Resistance Variation
V
GS
GS
Variation with Source Current
with Gate-to-Source Voltage.
= -2 .0 V
0.2
-V
S D
10
-V
T =1 25°C
GS
, BODY DIODE F ORWARD VOLTAGE (V)
2
J
and Temperature.
, GATE TO SOURCE VOLT AG E (V)
-2 .5 V
0.4
- I , DRAIN CURRENT (A)
D
-3 .0 V
20
25°C
-3 .5 V
0.6
3
-55°C
-4 .0 V
30
-4 .5 V
0.8
T = 1 25° C
J
4
25° C
40
I = -2.5A
D
1
FDS8433A Rev. C
1.2
50
5