FDFS2P102A Fairchild Semiconductor, FDFS2P102A Datasheet

MOSFET P-CH 20V 3.3A 8-SOIC

FDFS2P102A

Manufacturer Part Number
FDFS2P102A
Description
MOSFET P-CH 20V 3.3A 8-SOIC
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Datasheet

Specifications of FDFS2P102A

Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Diode (Isolated)
Rds On (max) @ Id, Vgs
125 mOhm @ 3.3A, 10V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
3.3A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
3nC @ 5V
Input Capacitance (ciss) @ Vds
182pF @ 10V
Power - Max
900mW
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
FDFS2P102ATR
FDFS2P102A_NL
FDFS2P102A_NLTR
FDFS2P102A_NLTR

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FDFS2P102A
Integrated P-Channel PowerTrench
General Description
The
performance of Fairchild's PowerTrench MOSFET
technology with a very low forward voltage drop
Schottky barrier rectifier in an SO-8 package.
This device is designed specifically as a single package
solution for DC to DC converters. It features a fast
switching, low gate charge MOSFET with very low on-
state resistance.
Schottky diode allows its use in a variety of DC/DC
converter topologies.
2001 Fairchild Semiconductor Corporation
Absolute Maximum Ratings
Symbol
V
V
I
P
T
V
I
Package Marking and Ordering Information
D
O
J
DSS
GSS
D
RRM
, T
Device Marking
STG
FDFS2P102A
FDFS2P102A
SO-8
MOSFET Drain-Source Voltage
MOSFET Gate-Source Voltage
Drain Current
Power Dissipation for Dual Operation
Power Dissipation for Single Operation
Operating and Storage Junction Temperature Range
Schottky Repetitive Peak Reverse Voltage
Schottky Average Forward Current
C
C
The independently connected
Pin 1
combines
D
D
FDFS2P102A
– Continuous
– Pulsed
Device
Parameter
A
the
A
S
exceptional
G
T
A
=25
o
C unless otherwise noted
Reel Size
   
13’’
MOSFET and Schottky Diode
(Note 1a)
(Note 1a)
(Note 1b)
(Note 1c)
(Note 1a)
Features
• –3.3 A, –20V R
• V
• Schottky and MOSFET incorporated into single
• Electrically independent Schottky and MOSFET
V
V
power surface mount SO-8 package
pinout for design flexibility
F
F
F
< 0.39 V @ 1 A (T
< 0.47 V @ 1 A
< 0.58 V @ 2 A
G
A
A
S
1
2
4
3
Tape width
R
DS(ON)
DS(ON)
12mm
Ratings
55 to +150
±20
1.6
0.9
J
20
3.3
2
1
1
20
10
= 125°C)
= 125 mΩ @ V
= 200 mΩ @ V
8
7
5
August 2001
6
FDFS2P102A Rev A1(W)
C
C
D
D
GS
GS
2500 units
Quantity
= –10 V
= –4.5 V
Units
°C
W
V
V
A
V
A

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FDFS2P102A Summary of contents

Page 1

... Reel Size 13’’ August 2001 = 125 mΩ –10 V DS(ON 200 mΩ –4.5 V DS(ON 125° Ratings Units – ±20 V – A 3.3 – 1.6 1 0.9 – ° +150 Tape width Quantity 12mm 2500 units FDFS2P102A Rev A1(W) ...

Page 2

... 125°C J Typ Max Units V –23 mV/°C –1 µA 100 nA –100 nA –1 –1.8 –3 V 4.4 mV/°C 96 125 mΩ 152 200 137 190 A 4.6 S 182 2.1 3.0 nC 1.0 nC 0.6 nC –1.3 A –0.8 –1 µ 0.47 V 0.39 0.58 0.53 FDFS2P102A Rev A1(W) ...

Page 3

... Scale letter size paper 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0% (Note 1a) (Note 1) is determined by the user's board design. θCA b) 125°C/W when mounted 0.02 in pad copper 78 °C/W 40 °C/W c) 135°C/W when mounted on a minimum pad. FDFS2P102A Rev A1(W) ...

Page 4

... Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. -4.5V -5.0V -6.0V -7.0V -10V DRAIN CURRENT ( -1. 125 GATE TO SOURCE VOLTAGE (V) GS Gate-to-Source Voltage 125 -55 C 0.2 0.4 0.6 0 BODY DIODE FORWARD VOLTAGE (V) SD FDFS2P102A Rev A1(W) 10 1.4 ...

Page 5

... C 1.0E-05 1.0E-06 1.0E-07 0.6 0.7 0.8 0 Figure 10. Schottky Diode Reverse Current. 0 TIME (sec 1MHz ISS C OSS C RSS DRAIN TO SOURCE VOLTAGE ( 125 REVERSE VOLTAGE ( ( θJA θ 135 °C/W θJA P(pk ( θJA Duty Cycle 100 1000 FDFS2P102A Rev A1(W) ...

Page 6

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FAST Bottomless™ FASTr™ CoolFET™ FRFET™ CROSSVOLT™ GlobalOptoisolator™ GTO™ DenseTrench™ ...

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