This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been special tailored to minimize the on-state resistance and yet maintain superior switching performance
This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been special tailored to minimize the on-state resistance and yet maintain superior switching performance
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance
... T =25 C unless otherwise noted A (Note 1a) (Note 1a) (Note 1b) (Note 1a) (Note 1) Reel Size 7’’ April 2001 –4.5 V DS(ON –2.5 V DS(ON Ratings Units – –5.5 A –20 1.6 W 0.8 –55 to +150 C 78 C/W 30 C/W Tape width Quantity 8mm 3000 units FDC602P Rev C(W) ...
... –4 –4 –5.5AT =125 –4 –5 V – – –5 – 1.0 MHz V = – – –4 GEN V = – –5 –4 –1.3 A (Note Typ Max Units V –14 mV/ C –1 A 100 nA –100 nA –0.9 –1 mV 1456 pF 300 pF 150 –1.3 A –0.7 –1.2 V FDC602P Rev C(W) ...
... Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. = -2.5V -3.0V -3.5V -4.0V -4. DRAIN CURRENT ( -3. 125 2.5 3 3 GATE TO SOURCE VOLTAGE (V) GS Gate-to-Source Voltage 125 -55 C 0.2 0.4 0.6 0 BODY DIODE FORWARD VOLTAGE (V) SD FDC602P Rev C( 1.4 ...
... Figure 8. Capacitance Characteristics. 50 100 s 1ms 100 Figure 10. Single Pulse Maximum 0.01 0 TIME (sec MHz ISS GS C OSS C RSS DRAIN TO SOURCE VOLTAGE ( SINGLE PULSE Power Dissipation. R ( 156 C P(pk ( Duty Cycle 100 1000 FDC602P Rev C(W) 20 ...
... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FAST Bottomless™ FASTr™ CoolFET™ FRFET™ CROSSVOLT™ GlobalOptoisolator™ GTO™ DenseTrench™ ...