FDC602P Fairchild Semiconductor, FDC602P Datasheet

MOSFET P-CH 20V 5.5A SSOT-6

FDC602P

Manufacturer Part Number
FDC602P
Description
MOSFET P-CH 20V 5.5A SSOT-6
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Datasheet

Specifications of FDC602P

Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
35 mOhm @ 5.5A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
5.5A
Vgs(th) (max) @ Id
1.5V @ 250µA
Gate Charge (qg) @ Vgs
20nC @ 4.5V
Input Capacitance (ciss) @ Vds
1456pF @ 10V
Power - Max
800mW
Mounting Type
Surface Mount
Package / Case
6-SSOT, SuperSOT-6
Configuration
Single Quad Drain
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
0.035 Ohm @ 4.5 V
Forward Transconductance Gfs (max / Min)
19 S
Drain-source Breakdown Voltage
20 V
Gate-source Breakdown Voltage
+/- 12 V
Continuous Drain Current
5.5 A
Power Dissipation
1600 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
FDC602P

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Part Number
Manufacturer
Quantity
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FDC602P
P-Channel 2.5V PowerTrench Specified MOSFET
General Description
This P-Channel 2.5V specified MOSFET uses a rugged
gate version of Fairchild’s advanced PowerTrench
process. It has been optimized for power management
applications with a wide range of gate drive voltage
(2.5V – 12V).
Applications
2001 Fairchild Semiconductor Corporation
Absolute Maximum Ratings
Symbol
V
V
I
P
T
Thermal Characteristics
R
R
Package Marking and Ordering Information
D
Battery management
Load switch
Battery protection
D
J
DSS
GSS
, T
JA
J C
Device Marking
STG
.602
SuperSOT -6
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Maximum Power Dissipation
Operating and Storage Junction Temperature Range
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
D
D
TM
S
– Continuous
– Pulsed
FDC602P
Device
Parameter
D
D
G
T
A
=25
o
C unless otherwise noted
Reel Size
7’’
(Note 1a)
(Note 1a)
(Note 1b)
(Note 1a)
(Note 1)
Features
–5.5 A, –20 V
Fast switching speed
High performance trench technology for extremely
low R
DS(ON)
1
2
3
Tape width
–55 to +150
R
R
Ratings
8mm
DS(ON)
DS(ON)
–5.5
–20
–20
1.6
0.8
78
30
12
= 35 m @ V
= 50 m @ V
6
5
4
April 2001
GS
GS
FDC602P Rev C(W)
3000 units
Quantity
= –4.5 V
= –2.5 V
Units
C/W
C/W
W
V
V
A
C

Related parts for FDC602P

FDC602P Summary of contents

Page 1

... T =25 C unless otherwise noted A (Note 1a) (Note 1a) (Note 1b) (Note 1a) (Note 1) Reel Size 7’’ April 2001 –4.5 V DS(ON –2.5 V DS(ON Ratings Units – –5.5 A –20 1.6 W 0.8 –55 to +150 C 78 C/W 30 C/W Tape width Quantity 8mm 3000 units FDC602P Rev C(W) ...

Page 2

... –4 –4 –5.5AT =125 –4 –5 V – – –5 – 1.0 MHz V = – – –4 GEN V = – –5 –4 –1.3 A (Note Typ Max Units V –14 mV/ C –1 A 100 nA –100 nA –0.9 –1 mV 1456 pF 300 pF 150 –1.3 A –0.7 –1.2 V FDC602P Rev C(W) ...

Page 3

... Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. = -2.5V -3.0V -3.5V -4.0V -4. DRAIN CURRENT ( -3. 125 2.5 3 3 GATE TO SOURCE VOLTAGE (V) GS Gate-to-Source Voltage 125 -55 C 0.2 0.4 0.6 0 BODY DIODE FORWARD VOLTAGE (V) SD FDC602P Rev C( 1.4 ...

Page 4

... Figure 8. Capacitance Characteristics. 50 100 s 1ms 100 Figure 10. Single Pulse Maximum 0.01 0 TIME (sec MHz ISS GS C OSS C RSS DRAIN TO SOURCE VOLTAGE ( SINGLE PULSE Power Dissipation. R ( 156 C P(pk ( Duty Cycle 100 1000 FDC602P Rev C(W) 20 ...

Page 5

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FAST Bottomless™ FASTr™ CoolFET™ FRFET™ CROSSVOLT™ GlobalOptoisolator™ GTO™ DenseTrench™ ...

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