FDN336P Fairchild Semiconductor, FDN336P Datasheet
FDN336P
Specifications of FDN336P
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FDN336P Summary of contents
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... Thermal Characteristics Thermal Resistance, Junction-to-Ambient R θJA Thermal Resistance, Junction-to-Case R θJC Package Marking and Ordering Information Device Marking Device 336 FDN336P ©2005 Fairchild Semiconductor Corporation ® MOSFET Features • –1.3 A, – advanced • Low gate charge (3.6 nC typical) • High performance trench technology for extremely ...
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... -0 -4 GEN -0. 270 C/W when mounted 0.001 in pad of 2oz Cu. Min Typ Max - -16 - 55°C J 100 -100 -0.4 -0.9 -1 0.122 T =125°C 0.18 0.32 J 0.19 0. 330 3.6 0.8 0.7 -0.42 -0.7 -1.2 (Note) Units µA µ 0 guaranteed by JC FDN336P Rev.D ...
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... DRAIN CURRENT (A) D Drain Current and Gate I = -0. 125°C A 25° GATE TO SOURCE VOLTAGE (V) GS Gate-to-Source Voltage 125°C J 25°C -55°C 0.4 0.6 0 BODY DIODE FORWARD VOLTAGE (V) SD Variation with Source Current and Temperature 1.4 FDN336P Rev.D ...
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... Transient thermal response will change depending on the circuit board design. C iss C oss C rss 0 DRAIN TO SOURCE VOLTAGE (V) DS SINGLE PULSE R =270°C 25°C A 0.001 0.01 0 100 300 SINGLE PULSE TIME (SEC) Dissipation. R ( 270 °C/W JA P(pk ( Duty Cycle 100 FDN336P Rev.D 20 300 ...
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... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FAST ActiveArray™ FASTr™ Bottomless™ FPS™ CoolFET™ FRFET™ CROSSVOLT™ GlobalOptoisolator™ ...