NDS351AN Fairchild Semiconductor, NDS351AN Datasheet - Page 4

• Manufacturer Part Number: NDS351AN
• Description: MOSFET N-CH 30V 1.4A SSOT3
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of NDS351AN

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 160 mOhm @ 1.4A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 1.4A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 1.8nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 145pF @ 15V
• Power - Max: 460mW
• Mounting Type: Surface Mount
• Package / Case: 3-SSOT, SuperSOT-3
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.16 Ohm @ 10 V
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 1.2 A
• Power Dissipation: 500 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Dc: 0442
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: NDS351ANTR

Typical Characteristics
0.01
100
0.1
10
10
Figure 9. Maximum Safe Operating Area.
0.001
1
8
6
4
2
0
Figure 7. Gate Charge Characteristics.
0.01
0.1
0
0.1
0.0001
1
SINGLE PULSE
R
R
DS(ON)
JA
V
T
I
GS
A
D
= 270
= 25
=1.4A
= 10V
0.5
D = 0.5
LIMIT
o
0.2
o
C/W
C
0.1
0.05
0.02
V
0.01
DS
, DRAIN-SOURCE VOLTAGE (V)
Q
1
1
g
SINGLE PULSE
0.001
, GATE CHARGE (nC)
DC
1s
1.5
100ms
Figure 11. Transient Thermal Response Curve.
V
10ms
DS
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
= 10V
10
2
1ms
0.01
20V
100 s
2.5
15V
100
3
0.1
t
1
, TIME (sec)
200
180
160
140
120
100
80
60
40
20
5
4
3
2
1
0
0
0.01
0
Figure 8. Capacitance Characteristics.
1
Figure 10. Single Pulse Maximum
5
0.1
V
Power Dissipation.
DS
, DRAIN TO SOURCE VOLTAGE (V)
10
10
C
C
C
1
t
ISS
OSS
RSS
1
, TIME (sec)
15
P(pk)
Duty Cycle, D = t
T
10
R
J
R
- T
JA
JA
20
(t) = r(t) * R
100
A
t
= 270
1
= P * R
t
2
SINGLE PULSE
R
100
o
JA
C/W
NDS351AN Rev E(W)
T
A
25
= 270°C/W
JA
= 25°C
1
f = 1 MHz
V
JA
(t)
/ t
GS
2
= 0 V
1000
1000
30