FDY100PZ Fairchild Semiconductor, FDY100PZ Datasheet - Page 4
![MOSFET P-CH 20V 350MA SC-89](/photos/5/45/54559/fdy100pz_sml.jpg)
FDY100PZ
Manufacturer Part Number
FDY100PZ
Description
MOSFET P-CH 20V 350MA SC-89
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Datasheet
1.FDY100PZ.pdf
(6 pages)
Specifications of FDY100PZ
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
1.2 Ohm @ 350mA, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
350mA
Vgs(th) (max) @ Id
1.5V @ 250µA
Gate Charge (qg) @ Vgs
1.4nC @ 4.5V
Input Capacitance (ciss) @ Vds
100pF @ 10V
Power - Max
446mW
Mounting Type
Surface Mount
Package / Case
SC-89-3
Configuration
Single
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
1.2 Ohm @ 4.5 V
Forward Transconductance Gfs (max / Min)
1 S
Drain-source Breakdown Voltage
20 V
Gate-source Breakdown Voltage
+/- 8 V
Continuous Drain Current
0.35 A
Power Dissipation
625 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Continuous Drain Current Id
350mA
Drain Source Voltage Vds
20V
On Resistance Rds(on)
1.2ohm
Rds(on) Test Voltage Vgs
-4.5V
Threshold Voltage Vgs Typ
-1V
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
FDY100PZTR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FDY100PZ
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
Part Number:
FDY100PZ-NL
Manufacturer:
ON/安森美
Quantity:
20 000
Typical Characteristics
FDY100PZ Rev A
0.01
0.1
10
10
1
0.01
8
6
4
2
0
0.01
Figure 9. Maximum Safe Operating Area.
0.1
Figure 7. Gate Charge Characteristics.
0
0.0001
1
R
I
SINGLE PULSE
D
R
DS(ON)
= -0.35A
θJA
V
T
GS
D = 0.5
A
= 280
= 25
0.2
LIMIT
= -4.5V
0.1
0.05
0.02
0.5
o
o
0.01
C
C/W
0.1
-V
SINGLE PULSE
DS
, DRAIN-SOURCE VOLTAGE (V)
V
Q
0.001
DS
g
, GATE CHARGE (nC)
= -5V
1
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
-10V
1
DC
Figure 11. Transient Thermal Response Curve.
10s
1.5
1s
-15V
100ms
0.01
10ms
10
1ms
2
100µs
2.5
100
0.1
t
1
, TIME (sec)
150
125
100
10
75
50
25
0.0001
8
6
4
2
0
0
0
Figure 8. Capacitance Characteristics.
1
C
Figure 10. Single Pulse Maximum
rss
0.001
2
-V
Power Dissipation.
DS
, DRAIN TO SOURCE VOLTAGE (V)
0.01
4
10
C
oss
t
1
, TIME (sec)
0.1
6
P(pk)
Duty Cycle, D = t
T
R
J
R
θJA
- T
θJA
(t) = r(t) * R
100
C
A
8
t
iss
1
=280 ° C/W
1
= P * R
t
2
www.fairchildsemi.com
SINGLE PULSE
R
θJA
T
A
θJA
= 280° C/W
= 25° C
1
10
10
θJA
(t)
/ t
f = 1 MHz
V
2
GS
= 0 V
1000
100
12