2N7002K Fairchild Semiconductor, 2N7002K Datasheet - Page 2

• Manufacturer Part Number: 2N7002K
• Description: MOSFET N-CH 60V 115MA SOT23
• Manufacturer: Fairchild Semiconductor
• Type: Small Signalr

Specifications of 2N7002K

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 2 Ohm @ 500mA, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 115mA
• Vgs(th) (max) @ Id: 2.5V @ 250µA
• Input Capacitance (ciss) @ Vds: 50pF @ 25V
• Power - Max: 350mW
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 2 Ohm @ 10 V
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 0.115 A
• Power Dissipation: 350 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Number Of Elements: 1
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 2Ohm
• Drain-source On-volt: 60V
• Gate-source Voltage (max): ±20V
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3
• Package Type: SOT-23
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 2N7002KTR

2N7002K Rev. A2
© 2010 Fairchild Semiconductor Corporation
Electrical Characteristics
Note1 : Short duration test pulse used to minimize self-heating effect.
Off Characteristics
On Characteristics
Dynamic Characteristics
Switching Characteristics
Symbol
R
BV
V
t
I
t
D(OFF)
DS(ON)
D(ON)
D(ON)
I
I
C
C
GS(th)
C
g
DSS
GSS
FS
oss
rss
DSS
iss
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
Gate Threshold Voltage
Satic Drain-Source On-Resistance V
On-State Drain Current
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Turn-Off Delay Time
Parameter
(Note1)
(Note1)
T
A
= 25°C unless otherwise noted
V
V
V
V
V
V
V
V
V
V
R
V
GS
DS
DS
GS
DS
GS
GS
GS
GS
DS
DS
DD
G
= 10Ω, V
= 60V, V
= 60V, V
= 0V, I
= ±20V, V
= V
= 10V, I
= 4.5V, I
= 10V, V
= 4.5V, V
= 10V, I
= 25V, V
= 30V, I
GS
Test Condition
2
, I
D
D
=10uA
D
DSS
GS
GS
D
GS
D
GS
DS
DS
DS
= 0.5A
= 0.2A
= 250uA
= 200mA
= 0V
= 0V, @T
= 10V
= 7.5V
= 0V, f = 1.0MHz
= 0V
= 10V
= 200mA,
C
= 125°C
MIN
200
1.0
1.5
1.2
60
MAX
500
±10
1.0
2.5
50
15
30
2
4
6
5
www.fairchildsemi.com
Units
mS
μA
μA
pF
pF
pF
ns
Ω
V
V
A