FDS6984S Fairchild Semiconductor, FDS6984S Datasheet

FDS6984S

Manufacturer Part Number

FDS6984S

Description

MOSFET N-CH DUAL 30V 8SOIC

Manufacturer

Fairchild Semiconductor

Series

PowerTrench®r

Datasheet

1.FDS6984S.pdf (9 pages)

Specifications of FDS6984S

Fet Type

2 N-Channel (Dual)

Fet Feature

Logic Level Gate

Rds On (max) @ Id, Vgs

19 mOhm @ 8.5A, 10V

Drain To Source Voltage (vdss)

30V

Current - Continuous Drain (id) @ 25° C

8.5A, 5.5A

Vgs(th) (max) @ Id

3V @ 250µA

Gate Charge (qg) @ Vgs

12nC @ 5V

Input Capacitance (ciss) @ Vds

1233pF @ 15V

Power - Max

900mW

Mounting Type

Surface Mount

Package / Case

8-SOIC (3.9mm Width)

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Other names

FDS6984S

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Meier Automation Equipment Co., Limited

Part Number:

FDS6984S

Manufacturer:

FAIRCHILD/仙童

Quantity:

20 000

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

FDS6984S-NL

Manufacturer:

FAIRCHILD

Quantity:

50 000

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FDS6984S

Dual Notebook Power Supply N-Channel PowerTrench

General Description

The FDS6984S is designed to replace two single SO-8

MOSFETs and Schottky diode in synchronous DC:DC

power supplies that provide various peripheral voltages

for notebook computers and other battery powered

electronic devices. FDS6984S contains two unique

30V, N-channel, logic level, PowerTrench MOSFETs

designed to maximize power conversion efficiency.

The high-side switch (Q1) is designed with specific

emphasis on reducing switching losses while the low-

side switch (Q2) is optimized to reduce conduction

losses. Q2 also includes an integrated Schottky diode

using Fairchild’s monolithic SyncFET technology.

2000 Fairchild Semiconductor Corporation

Absolute Maximum Ratings

Thermal Characteristics

Package Marking and Ordering Information

Symbol

DSS

GSS

θJA

θJC

, T

Device Marking

STG

FDS6984S

SO-8

Drain-Source Voltage

Gate-Source Voltage

Drain Current

Power Dissipation for Dual Operation

Power Dissipation for Single Operation

Operating and Storage Junction Temperature Range

Thermal Resistance, Junction-to-Ambient

Thermal Resistance, Junction-to-Case

- Continuous

- Pulsed

FDS6984S

Device

Parameter

= 25°C unless otherwise noted

Reel Size

13”

(Note 1a)

(Note 1b)

(Note 1c)

(Note 1a)

(Note 1)

Features

•

Q2:

Q1:

5.5A, 30V

8.5A, 30V

Optimized to minimize conduction losses

Includes SyncFET Schottky diode

Optimized for low switching losses

Low gate charge ( 5 nC typical)

±20

8.5

Tape width

12mm

-55 to +150

DS(on)

   

1.6

0.9

SyncFET

= 19 mΩ

= 28 mΩ

= 0.040Ω

= 0.055Ω

September 2000

±20

5.5

@ V

™

FDS6984S Rev C(W)

2500 units

= 10V

= 4.5V

Quantity

= 10V

= 4.5V

Units

°C/W

°C

Related parts for FDS6984S

FDS6984S Summary of contents

Page 1

... FDS6984S Dual Notebook Power Supply N-Channel PowerTrench General Description The FDS6984S is designed to replace two single SO-8 MOSFETs and Schottky diode in synchronous DC:DC power supplies that provide various peripheral voltages for notebook computers and other battery powered electronic devices. FDS6984S contains two unique 30V, N-channel, logic level, PowerTrench MOSFETs designed to maximize power conversion efficiency ...

Page 2

Electrical Characteristics Symbol Parameter Off Characteristics BV Drain-Source Breakdown DSS Voltage I Zero Gate Voltage Drain DSS Current I Gate-Body Leakage, Forward V GSSF I Gate-Body Leakage, Reverse V GSSR On Characteristics (Note 2) V Gate Threshold Voltage GS(th) Gate ...

Page 3

Electrical Characteristics Symbol Parameter Drain–Source Diode Characteristics and Maximum Ratings I Maximum Continuous Drain-Source Diode Forward Current S t Reverse Recovery Time rr Q Reverse Recovery Charge rr V Drain-Source Diode Forward SD Voltage Notes the sum ...

Page 4

Typical Characteristics 10V GS 6.0V 5.0V 40 4. DRAIN-SOURCE VOLTAGE (V) DS Figure 1. On-Region Characteristics. 1 10A 10V GS 1.6 1.3 ...

Page 5

Typical Characteristics =10A GATE CHARGE (nC) g Figure 7. Gate Charge Characteristics. 100 R LIMIT DS(ON) 1ms 10 10ms 100ms 1s 1 10s DC ...

Page 6

Typical Characteristics 10V GS 6.0 5 DRAIN-SOURCE VOLTAGE (V) DS Figure 11. On-Region Characteristics 10V 1.6 GS 1.4 ...

Page 7

Typical Characteristics 4. GATE CHARGE (nC) g Figure 17. Gate Charge Characteristics. 100 R LIMIT DS(ON) 10 10ms 100ms 1s 1 10s DC ...

Page 8

... Schottky diode in parallel with a MOSFET. Figure 22 shows the reverse recovery characteristic of the FDS6984S. 10nS/DIV Figure 22. FDS6984S SyncFET body diode reverse recovery characteristic. For comparison purposes, Figure 23 shows the reverse recovery characteristics of the body diode of an equivalent size MOSFET produced without SyncFET (FDS6690A) ...

Page 9

TRADEMARKS DISCLAIMER LIFE SUPPORT POLICY PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition ...

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