FDR8308P Fairchild Semiconductor, FDR8308P Datasheet - Page 53

• Manufacturer Part Number: FDR8308P
• Description: MOSFET P-CH DUAL 20V 3.2A SSOT-8
• Manufacturer: Fairchild Semiconductor

Specifications of FDR8308P

• Fet Type: 2 P-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 50 mOhm @ 3.2A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 3.2A
• Vgs(th) (max) @ Id: 1.5V @ 250µA
• Gate Charge (qg) @ Vgs: 19nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 1240pF @ 10V
• Power - Max: 800mW
• Mounting Type: Surface Mount
• Package / Case: 8-SSOT, SuperSOT-8
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDR8308P; FDR8308PTR

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TO-262 (I
IRFI624B
FQI4N25
IRFI614B
FQI3N25
FQI5N30
FQI3N30
FQI2N30
FQI11N40
IRFI740B
FQI7N40
FQI6N40C
FQI6N40
FQI5N40
FQI3N40
FQI6N45
FQI13N50C
FQI9N50
FQI9N50C
IRFI840B
FQI6N50
FQI5N50C
IRFI830B
FQI5N50
SSI1N50B
FQI12N60C
FQI12N60
FQI10N60C
SSI10N60B
FQI7N60
FQI8N60C
SSI7N60B
FQI6N60C
FQI4N60
FQI5N60C
SSI4N60B
SSI2N60B
SSI1N60B
FQI6N70
FQI7N80
Products
2
PAK) (Continued)
Min. (V)
BV
250
250
250
250
300
300
300
400
400
400
400
400
400
400
450
500
500
500
500
500
500
500
500
500
600
600
600
600
600
600
600
600
600
600
600
600
600
700
800
DSS
Config.
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
10V
1.75
0.48
0.54
1.15
0.48
0.73
0.85
0.65
0.73
1.1
2.2
0.9
2.2
3.7
0.8
1.6
3.4
1.1
0.8
1.3
1.4
1.5
1.8
5.5
0.7
0.8
1.2
1.2
2.2
2.5
2.5
1.5
1.5
12
2
1
1
2
5
R
DS(ON)
4.5V
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
Max (Ω) @ V
2-48
2.5V
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
GS
=
Bold = New Products (introduced January 2003 or later)
1.8V
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
Discrete Power Products –
Q
@V
g
Typ. (nC)
GS
13.5
16.5
12.5
4.3
8.1
9.8
5.5
3.7
8.3
5.9
27
41
16
13
10
16
43
28
28
41
17
18
27
13
48
42
44
54
29
28
38
16
15
15
22
30
40
4
6
= 5V
I
D
11.4
10.5
4.1
3.6
2.8
2.8
5.4
3.2
2.1
5.5
4.5
2.5
6.2
5.5
4.5
4.5
1.5
9.5
7.4
7.5
5.5
4.4
4.5
6.2
6.6
10
13
12
7
9
9
2
6
9
8
5
7
4
1
(A)
MOSFETs
P
D
147
134
195
147
135
134
225
180
156
156
142
147
147
125
106
100
100
142
167
49
52
40
45
70
55
40
98
73
85
70
55
98
98
73
73
85
36
54
34
(W)