FDZ2554P Fairchild Semiconductor, FDZ2554P Datasheet
FDZ2554P
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FDZ2554P Summary of contents
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... Fairchild Semiconductor Corporation FDZ2554P Rev B General Description = -6.5A Combining Fairchild’s advanced 2.5V specified PowerTrench D process with state-of-the-art BGA packaging, the FDZ2554P = -5A D minimizes both PCB space and r drain BGA MOSFET embodies a breakthrough in packaging technology which enables the device to combine excellent ...
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... defined for reference. For R θJB are guaranteed by design while R is determined by the user's board design. θJA 2. Pulse Test: Pulse Width < 300µs, Duty cycle < 2.0%. ©2007 Fairchild Semiconductor Corporation FDZ2554P Rev 25°C unless otherwise noted J Test Conditions I = -250µ ...
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... JUNCTION TEMPERATURE J Figure 3. Normalized On- Resistance vs Junction Temperature 20 µ PULSE DURATION = 300 DUTY CYCLE = 2.0%MAX =125 0.5 1.0 1 GATE TO SOURCE VOLTAGE (V) GS Figure 5. Transfer Characteristics ©2007 Fairchild Semiconductor Corporation FDZ2554P Rev 25°C unless otherwise noted -2V GS µ s 1.5 2.0 75 100 125 150 ( o ...
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... DRAIN to SOURCE VOLTAGE (V) DS Figure 9. Forward Bias Safe Operating Area 2 1 DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.1 0.02 0.01 0.01 SINGLE PULSE 1E ©2007 Fairchild Semiconductor Corporation FDZ2554P Rev 25°C unless otherwise noted -10V -15V 3000 1000 1ms 10ms 100ms 1s 10s DC 10 ...
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... Dimensional Outline and Pad Layout ©2007 Fairchild Semiconductor Corporation FDZ2554P Rev B 5 www.fairchildsemi.com ...
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... PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Preliminary No Identification Needed Obsolete ©2007 Fairchild Semiconductor Corporation FDZ2554P Rev B Green FPS™ e-Series™ POEWEREDGE GOT™ Power-SPM™ i-Lo™ PowerTrench IntelliMAX™ Programmable Active Droop™ ...