FDZ2553NZ Fairchild Semiconductor, FDZ2553NZ Datasheet - Page 5

MOSFET N-CH 20V 9.6A BGA

FDZ2553NZ

Manufacturer Part Number
FDZ2553NZ
Description
MOSFET N-CH 20V 9.6A BGA
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Datasheet

Specifications of FDZ2553NZ

Fet Type
2 N-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
14 mOhm @ 9.6A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
9.6A
Vgs(th) (max) @ Id
1.5V @ 250µA
Gate Charge (qg) @ Vgs
18nC @ 5V
Input Capacitance (ciss) @ Vds
1240pF @ 10V
Power - Max
2.1W
Mounting Type
Surface Mount
Package / Case
12-BGA (18 pos)
Configuration
Dual Common Drain
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.012 Ohms
Forward Transconductance Gfs (max / Min)
45 S
Drain-source Breakdown Voltage
20 V
Gate-source Breakdown Voltage
+/- 12 V
Continuous Drain Current
9.6 A
Power Dissipation
2.1 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FDZ2553NZ
Manufacturer:
ZETEX
Quantity:
46
Part Number:
FDZ2553NZ
Manufacturer:
Fairchild Semiconductor
Quantity:
10 000
Typical Characteristics
0.01
100
0.1
10
1
Figure 9. Maximum Safe Operating Area.
10
0.01
8
6
4
2
0
Figure 7. Gate Charge Characteristics.
0
0.001
R
0.01
0.1
I
DS(ON)
D
SINGLE PULSE
R
1
0.001
= 9.6A
V
J A
T
GS
A
= 108
LIMIT
= 25
= 4.5V
D = 0.5
5
o
o
C/W
C
0.1
0.2
V
0.1
DS
0.05
, DRAIN-SOURCE VOLTAGE (V)
0.02
0.01
Q
g
, GATE CHARGE (nC)
10
SINGLE PULSE
0.01
DC
10s
1
V
Figure 11. Transient Thermal Response Curve.
DS
= 5V
1s
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
15
100ms
15V
10ms
1 0
0.1
10V
20
1ms
100
25
t
1
, TIME (sec)
1
1800
1200
600
50
40
30
20
10
0
Figure 8. Capacitance Characteristics.
0
0.01
0
Figure 10. Single Pulse Maximum
C
rss
10
0.1
V
Power Dissipation.
D S
5
C
, DRAIN TO SOURCE VOLTAGE (V)
oss
1
P(pk)
t
Duty Cycle, D = t
1
T
, TIME (sec)
R
R
J
100
- T
JA
JA
10
(t) = r(t) * R
A
= 108 °C/W
t
1
= P * R
t
2
C
10
iss
JA
1
JA
(t)
/ t
SINGLE PULSE
R
2
15
FDZ2553NZ Rev C (W)
JA
T
100
1000
A
= 108°C/W
= 25°C
V
f = 1MHz
GS
= 0 V
1000
20

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