FDW2521C Fairchild Semiconductor, FDW2521C Datasheet - Page 3

• Manufacturer Part Number: FDW2521C
• Description: MOSFET N/P 20V 5.5/2.8A 8-TSSOP
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDW2521C

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 21 mOhm @ 5.5A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 5.5A, 3.8A
• Vgs(th) (max) @ Id: 1.5V @ 250µA
• Gate Charge (qg) @ Vgs: 17nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 1082pF @ 10V
• Power - Max: 600mW
• Mounting Type: Surface Mount
• Package / Case: 8-TSSOP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Notes:
1. R
2. Pulse Test: Pulse Width < 300 s, Duty Cycle < 2.0%
Drain-Source Diode Characteristics and Maximum Ratings
I
V
S
Electrical Characteristics
Symbol
SD
the drain pins. R
a) R
b) R
JA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
JA
JA
is 125 C/W (steady state) when mounted on a 1 inch² copper pad on FR-4.
is 208 C/W (steady state) when mounted on a minimum copper pad on FR-4.
Maximum Continuous Drain-Source Diode Forward Current
Drain-Source Diode Forward
Voltage
JC
is guaranteed by design while R
Parameter
CA
(continued)
is determined by the user's board design.
V
V
GS
GS
= 0 V, I
= 0 V, I
Test Conditions
S
S
= 0.83 A
= –0.83 A
T
A
= 25°C unless otherwise noted
(Note 2)
(Note 2)
Type
Q1
Q2
Q1
Q2
Min Typ Max Units
–0.7
0.7
–0.83
FDW2521C Rev D1(W)
0.83
–1.2
1.2
A
V