NDS9925A Fairchild Semiconductor, NDS9925A Datasheet

MOSFET N-CH DUAL 20V 4.5A 8-SOIC

NDS9925A

Manufacturer Part Number
NDS9925A
Description
MOSFET N-CH DUAL 20V 4.5A 8-SOIC
Manufacturer
Fairchild Semiconductor
Datasheet

Specifications of NDS9925A

Fet Type
2 N-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
60 mOhm @ 4.5A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
4.5A
Vgs(th) (max) @ Id
1V @ 250µA
Power - Max
900mW
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Gate Charge (qg) @ Vgs
-

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Absolute Maximum Ratings
© 1998 Fairchild Semiconductor Corporation
Symbol
V
V
I
P
T
THERMAL CHARACTERISTICS
R
R
D
J
DSS
GSS
D
Dual N-Channel Enhancement Mode Field Effect Transistor
General Description
,T
NDS9925A
JA
J
SO-8 N-Channel enhancement mode power field effect
transistors are produced using Fairchild's proprietary,
high cell density, DMOS technology. This very high
density process is especially tailored to minimize
on-state resistance and provide superior switching
performance. These devices are particularly suited for
low voltage applications such as notebook computer
power management and other battery powered circuits
where fast switching, low in-line power loss, and
resistance to transients are needed.
C
STG
SOT-23
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Power Dissipation for Dual Operation
Power Dissipation for Single Operation
Operating and Storage Temperature Range
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
D1
SO-8
D1
SuperSOT
D2
D2
- Continuous
- Pulsed
pin 1
TM
-6
S1
T
G1
A
= 25°C unless otherwise noted
S2
SuperSOT
G2
(Note 1a)
(Note 1)
(Note 1a)
(Note 1b)
(Note 1c)
(Note 1a)
TM
-8
Features
4.5 A, 20 V. R
High density cell design for extremely low R
High power and current handling capability in a widely
used surface mount package.
Dual MOSFET in surface mount package.
SO-8
R
6
5
8
DS(ON)
7
DS(ON)
NDS9925A
-55 to 150
4.5
1.6
0.9
20
±8
15
78
40
= 0.060
2
1
= 0.075
SOT-223
@ V
@ V
GS
GS
= 4.5 V
= 2.7 V.
1
4
3
2
SOIC-16
May 1998
DS(ON)
NDS9925A Rev. A
.
°C/W
°C/W
Units
°C
W
V
V
A

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NDS9925A Summary of contents

Page 1

... Dual MOSFET in surface mount package. TM SuperSOT -8 SO 25°C unless otherwise noted A (Note 1a) (Note 1a) (Note 1b) (Note 1c) (Note 1a) (Note 1) May 1998 = 0.060 @ V = 4.5 V DS(ON 0.075 @ V = 2.7 V. DS(ON DS(ON) SOT-223 SOIC- NDS9925A Units 20 ±8 4 1.6 1 0.9 -55 to 150 78 °C/W 40 °C/W NDS9925A Rev °C ...

Page 2

... Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%. = 25°C unless otherwise noted) A Conditions 250 µ 250 µ 125 pad of 2oz copper. Min Typ 20 0.4 0.075 15 (Note 135 C 0.02 in pad of 2oz copper. Max Units V 1 µA 100 nA -100 0.06 A 1 0.003 in NDS9925A Rev. A ...

Page 3

SO-8 Tape and Reel Data and Package Dimensions SOIC(8lds) Packaging Configuration: Figure 1 SHI P OR STO RE N EAR ECT ROST ECT RO M AGN ETI ...

Page 4

... Dim A max 13" Diameter Option Reel Tape Size Dim A Dim B Option 7.00 0.059 12mm 7" Dia 177.8 1.5 13.00 0.059 12mm 13" Dia 330 1.5 1998 Fairchild Semiconductor Corporation User Direction of Feed Dimensions are in millimeter 1.55 1.60 1.75 10.25 5.50 8.0 +/-0 ...

Page 5

SO-8 Tape and Reel Data and Package Dimensions, continued SOIC-8 (FS PKG Code S1 Scale 1:1 on letter size paper Dimensions shown below are in: inches [millimeters] Part Weight per unit (gram): 0.0774 September 1998, Rev. ...

Page 6

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ CoolFET™ CROSSVOLT™ CMOS FACT™ FACT Quiet Series™ ® FAST FASTr™ GTO™ ...

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