USB10H Fairchild Semiconductor, USB10H Datasheet - Page 124
USB10H
Manufacturer Part Number
USB10H
Description
MOSFET P-CH DUAL 20V SSOT6
Manufacturer
Fairchild Semiconductor
Datasheet
1.USB10H.pdf
(214 pages)
Specifications of USB10H
Fet Type
2 P-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
170 mOhm @ 1.9A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
1.9A
Vgs(th) (max) @ Id
1.5V @ 250µA
Gate Charge (qg) @ Vgs
4.2nC @ 4.5V
Input Capacitance (ciss) @ Vds
441pF @ 10V
Power - Max
700mW
Mounting Type
Surface Mount
Package / Case
6-SSOT, SuperSOT-6
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
USB10H
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
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JFETs (Continued)
2N5458
2N3819
MPF102
2N5459
J108
PN5432
J105
BF246B
BF247A
PF5301-2
J305
2N5953
PN4393
2N5952
PN4302
2N5246
PN4861
TIS75
2N5951
PN4392
PN4303
2N5245
J304
PN4416
2N5950
TIS74
BF256A
BF256B
BF256C
BF244A
BF245A
BF244B
BF245B
2N5247
Products
BV
(V)
25
25
25
25
25
25
25
25
25
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
GDS
Dissipation
Power
(mW)
625
350
350
625
625
350
625
625
625
350
625
350
625
350
625
350
350
625
625
350
350
350
350
350
350
350
350
350
350
350
350
350
P
–
–
D
Min (V)
4.5
0.6
0.6
1.7
0.5
0.8
0.5
1.3
0.5
0.8
0.8
2.5
2.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
–
–
–
–
1
2
3
4
2
2
1
2
2
1
Typ (V) Max (V) @ I
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
V
14.5
14.5
GS
3.5
7.5
7.5
7.5
10
10
10
7
8
8
8
3
3
3
3
4
4
4
4
5
5
6
6
6
6
6
6
8
8
8
8
8
(off)
0.002
0.002
0.003
0.001
0.001
0.001
0.001
0.004
0.001
0.001
0.001
0.004
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.1
0.1
0.1
0.1
0.2
0.2
0.2
D
1
(µA) @ V
2-119
Discrete Power Products –
15
15
15
15
15
15
15
10
15
15
20
15
20
15
15
20
15
20
20
15
15
15
15
15
15
15
15
15
15
15
15
15
DS
5
5
(V) Min (mA) Max (mA) @V
0.03
150
500
0.5
2.5
1.5
80
60
60
25
10
20
11
2
2
2
4
1
5
4
8
8
7
4
5
5
5
3
6
2
2
6
6
8
140
140
100
6.5
I
0.5
6.5
20
20
16
30
80
80
13
75
10
15
15
15
15
13
18
15
15
24
DSS
9
–
–
–
8
5
8
5
7
7
15
15
15
15
15
15
15
15
15
10
15
15
20
15
20
15
15
15
15
20
20
15
15
15
15
15
15
15
15
15
15
15
15
15
DS
(V) Min (mS) Max (mS)
Bipolar Transistors and JFETs
0.07
1.5
4.5
4.5
4.5
4.5
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
2
2
8
8
2
1
2
3
3
GFS
5.5
7.5
6.5
6.5
0.3
6.5
11
–
6
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
R
(Ω)
100
60
60
60
40
–
–
–
–
8
5
3
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
DS
I
0.0002
0.0001
0.0003
0.0001
D
0.003
0.002
0.002
(µA)
(off)
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
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