FDC6322C Fairchild Semiconductor, FDC6322C Datasheet - Page 5

• Manufacturer Part Number: FDC6322C
• Description: MOSFET N/P-CH DUAL 25V SSOT-6
• Manufacturer: Fairchild Semiconductor

Specifications of FDC6322C

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 4 Ohm @ 400mA, 4.5V
• Drain To Source Voltage (vdss): 25V
• Current - Continuous Drain (id) @ 25° C: 220mA, 460mA
• Vgs(th) (max) @ Id: 1.5V @ 250µA
• Gate Charge (qg) @ Vgs: 0.7nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 9.5pF @ 10V
• Power - Max: 700mW
• Mounting Type: Surface Mount
• Package / Case: 6-SSOT, SuperSOT-6
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Typical Electrical Characteristics: N-Channel
3 0
2 0
1 0
0.05
0.02
0.01
5
3
2
1
0.1
0.5
0.2
0.1
Figure 7. Capacitance Characteristics.
Figure 9. Maximum Safe Operating Area.
1
0.5
f = 1 MHz
V
GS
R
SINGLE PULSE
JA
= 0V
V
T = 25°C
=See note 1b
GS
A
1
= 2.7V
V
DS
V
0.5
DS
, DRAIN TO SOURCE VOLTAGE (V)
, DRAI N-SOURCE VOLTAGE (V)
2
1
2
5
5
10
1 0
15
C rss
C oss
C iss
25
2 5
35
5
4
3
2
1
0
0
5
4
3
2
1
0
0.01
Figure 8. Gate Charge Characteristics
(continued)
I = 0.2A
Figure 10. Single Pulse Maximum Power
D
0.1
Dissipation.
0.1
0.2
Q
SINGLE PULSE TIME (SEC)
g
, GATE CHARGE (nC)
1
0.3
0.4
V
R
10
SINGLE PULSE
DS
JA
T = 25°C
= 5V
=See note 1b
A
.
10V
0.5
FDC6322C.Rev B1
15V
100
300
0.6