FDS6993 Fairchild Semiconductor, FDS6993 Datasheet - Page 2
FDS6993
Manufacturer Part Number
FDS6993
Description
MOSFET P-CH DUAL 30/12V 8SOIC
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Datasheet
1.FDS6993.pdf
(8 pages)
Specifications of FDS6993
Fet Type
2 P-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
55 mOhm @ 4.3A, 10V
Drain To Source Voltage (vdss)
30V, 12V
Current - Continuous Drain (id) @ 25° C
4.3A, 6.8A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
7.7nC @ 5V
Input Capacitance (ciss) @ Vds
530pF @ 15V
Power - Max
900mW
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Configuration
Dual Dual Drain
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
0.055 Ohms
Drain-source Breakdown Voltage
- 30 V, + 12 V
Gate-source Breakdown Voltage
+/- 25 V, +/- 8 V
Continuous Drain Current
4.3 A, - 6.8 A
Power Dissipation
2 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
FDS6993
Manufacturer:
FSC
Quantity:
63 600
Company:
Part Number:
FDS6993-NL
Manufacturer:
FSC
Quantity:
60 000
Company:
Part Number:
FDS6993-NL
Manufacturer:
MCC
Quantity:
15 000
Company:
Part Number:
FDS6993-NL
Manufacturer:
FAIRCHILD
Quantity:
50 000
BV
I
I
V
R
I
g
C
C
C
Electrical Characteristics
Off Characteristics
On Characteristics
Dynamic Characteristics
Symbol
DSS
GSS
D(on)
BV
FS
V
GS(th)
DS(on)
iss
oss
rss
DSS
T
GS(th)
T
DSS
J
J
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain-Source
On-Resistance
On-State Drain Current
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Drain-Source Breakdown
Voltage
Breakdown Voltage
Temperature Coefficient
Zero Gate Voltage Drain
Current
Gate-Body Leakage
Parameter
(Note 2)
V
V
I
I
V
V
V
V
V
V
V
V
V
V
V
Q1
V
Q2
V
D
D
V
V
I
I
V
V
V
V
D
D
DS
DS
GS
GS
GS
GS
GS
GS
GS
GS
GS
DS
DS
DS
DS
= –250 A, Referenced to 25 C
= –250 µA, Referenced to 25 C
GS
GS
DS
DS
GS
GS
= –250 A, Referenced to 25 C
= –250 µA, Referenced to 25 C
= V
= V
= –10 V, I
= –5 V, I
= –15 V, V
= –6 V, V
= –10 V, I
= –10 V, I
= –4.5 V, I
= –4.5 V, I
= –4.5 V, I
= –2.5 V, I
= –1.8 V, I
= –10 V, V
= –4.5 V, V
= 0 V, I
= 0 V, I
= –24 V, V
= –10 V, V
= ±25 V, V
= ±8 V, V
GS
GS
T
Test Conditions
A
, I
, I
= 25°C unless otherwise noted
D
D
D
D
D
= –250 A
= –250 µA
GS
= –250 A
= –250 A
D
D
D
= –5 A
DS
D
D
D
D
D
GS
DS
DS
GS
GS
= –4.3 A
= –4.3 A, T
= –7 A
DS
= –3.4 A
= –6.8 A
= –6.8 A, T
= –5.9 A
= –5.0
= 0 V, f = 1.0 MHz
= 0 V
= –5 V
= 0 V, f = 1.0 MHz
= –5 V
= 0 V
= 0 V
= 0 V
J
J
= 125 C
= 125 C
Type Min Typ Max Units
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
–0.4
–20
–20
–30
–12
–1
2980
1230
–1.8
–0.5
–0.9
530
140
790
–21
48
64
74
11
14
14
19
34
70
4
3
9
–1.5
±100
±100
–3
55
80
85
17
24
24
30
–1
–1
FDS6993 Rev C (W)
mV/ C
mV/ C
m
pF
pF
pF
nA
V
A
S
V
A