FDS6892AZ Fairchild Semiconductor, FDS6892AZ Datasheet

MOSFET N-CH DUAL 20V 8A 8SOIC

FDS6892AZ

Manufacturer Part Number
FDS6892AZ
Description
MOSFET N-CH DUAL 20V 8A 8SOIC
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Datasheet

Specifications of FDS6892AZ

Fet Type
2 N-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
18 mOhm @ 7.5A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
7.5A
Vgs(th) (max) @ Id
1.5V @ 250µA
Gate Charge (qg) @ Vgs
17nC @ 4.5V
Input Capacitance (ciss) @ Vds
1286pF @ 10V
Power - Max
900mW
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FDS6892AZ-NL
Manufacturer:
FAIRCHILD
Quantity:
50 000
Part Number:
FDS6892AZ-NL
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
FDS6892AZ
Dual N-Channel Logic Level PWM Optimized PowerTrench MOSFET
General Description
These N-Channel Logic Level MOSFETs are produced
using
PowerTrench process that has been especially tailored
to minimize the on-state resistance and yet maintain
superior switching performance.
These devices are well suited for low voltage and
battery powered applications where low in-line power
loss and fast switching are required.
2001 Fairchild Semiconductor Corporation
Absolute Maximum Ratings
Symbol
V
V
I
P
T
Thermal Characteristics
R
R
Package Marking and Ordering Information
D
J
DSS
GSS
D
, T
JA
JC
Device Marking
STG
FDS6892AZ
Fairchild
SO-8
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Power Dissipation for Dual Operation
Power Dissipation for Single Operation
Operating and Storage Junction Temperature Range
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
Pin 1
D
D2
Semiconductor’s
D
D2
SO-8
D
– Continuous
– Pulsed
D1
FDS6892AZ
D
Device
D1
Parameter
S2
S
G2
S
advanced
S1
S
G1
T
G
A
=25
o
C unless otherwise noted
Reel Size
13’’
(Note 1a)
(Note 1a)
(Note 1b)
(Note 1c)
(Note 1a)
(Note 1)
Features
7.5 A, 20 V.
Low gate charge (12 nC typical)
High performance trench technology for extremely
High power and current handling capability
low R
DS(ON)
5
6
8
7
Tape width
Q1
Q2
–55 to +150
12mm
Ratings
R
R
DS(ON)
DS(ON)
7.5
1.6
0.9
20
30
78
40
2
1
12
= 18 m @ V
= 24 m @ V
October 2001
1
4
3
2
FDS6892AZ Rev C (W)
GS
GS
2500 units
Quantity
= 4.5 V
= 2.5 V
Units
C/W
C/W
W
V
V
A
C

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FDS6892AZ Summary of contents

Page 1

... High power and current handling capability =25 C unless otherwise noted A (Note 1a) (Note 1a) (Note 1b) (Note 1c) (Note 1a) (Note 1) Reel Size 13’’ October 2001 4.5 V DS(ON 2.5 V DS(ON Ratings Units 7 1.6 1 0.9 –55 to +150 C 78 C/W 40 C/W Tape width Quantity 12mm 2500 units FDS6892AZ Rev C (W) ...

Page 2

... GEN 7 4 1.3 A (Note determined by the user's board design 125°C/W when mounted pad copper Min Typ Max Units mV –10 0.6 1.0 1.5 V –3 mV 1286 pF 305 pF 161 2 1.3 A 0.7 1 135°C/W when mounted on a minimum mounting pad. FDS6892AZ Rev C (W) ...

Page 3

... Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. = 2.5V 3.0V 3.5V 4.0V 4. DRAIN CURRENT ( 3. 125 GATE TO SOURCE VOLTAGE (V) GS Gate-to-Source Voltage 125 -55 C 0.2 0.4 0.6 0 BODY DIODE FORWARD VOLTAGE (V) SD FDS6892AZ Rev C ( 1.2 ...

Page 4

... Figure 10. Single Pulse Maximum 0.01 0 TIME (sec MHz ISS C OSS C RSS DRAIN TO SOURCE VOLTAGE (V) DS SINGLE PULSE R = 135°C 25°C A 0.01 0 100 t , TIME (sec) 1 Power Dissipation. R ( 135 C/W JA P(pk ( Duty Cycle 100 1000 FDS6892AZ Rev C (W) 20 ...

Page 5

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FAST Bottomless™ FASTr™ FRFET™ CoolFET™ GlobalOptoisolator™ CROSSVOLT™ GTO™ DenseTrench™ ...

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