FDS8947A Fairchild Semiconductor, FDS8947A Datasheet - Page 2

• Manufacturer Part Number: FDS8947A
• Description: MOSFET P-CH DUAL 30V 4A 8SOIC
• Manufacturer: Fairchild Semiconductor

Specifications of FDS8947A

• Fet Type: 2 P-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 52 mOhm @ 4A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 4A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 27nC @ 10V
• Input Capacitance (ciss) @ Vds: 730pF @ 15V
• Power - Max: 900mW
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Electrical Characteristics (
Symbol
OFF CHARACTERISTICS
BV
I
I
I
ON CHARACTERISTICS
V
R
I
g
DYNAMIC CH ARACTERISTICS
C
C
C
SWITCHING CHARACTERISTICS
t
t
t
t
Q
Q
Q
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
I
V
t
I
Notes:
1. R
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%.
DSS
GSSF
GSSR
D(ON)
D(on)
r
D(off)
f
S
rr
rr
FS
BV
GS(th)
V
SD
DS(ON)
iss
oss
rss
g
gs
gd
Scale 1 : 1 on letter size paper
design while R
DSS
GS(th)
DSS
JA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. R
/ T
/ T
J
J
CA
Parameter
Drain-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Zero Gate Voltage Drain Current
Gate - Body Leakage, Forward
Gate - Body Leakage, Reverse
Gate Threshold Voltage
Gate Threshold Voltage Temp. Coefficient
Static Drain-Source On-Resistance
On-State Drain Current
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn - On Delay Time
Turn - On Rise Time
Turn - Off Delay Time
Turn - Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Maximum Continuous Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Current
is determined by the user's board design.
(Note 2)
T
A
a. 78
= 25
pad of 2oz copper.
(Note 2)
O
C/W on a 0.5 in
O
C unless otherwise noted )
2
Conditions
V
I
V
V
V
V
I
V
V
V
V
V
V
V
V
V
V
V
dI
D
D
f = 1.0 MHz
GS
DS
GS
GS
DS
GS
GS
GS
DS
DS
DS
GS
DS
GS
GS
GS
= -250 µA, Referenced to 25
= -250 µA, Referenced to 25
F
/dt = 100 A/µs
= -10 V, I
= 0 V, I
= -24 V, V
= 20 V, V
= -20 V, V
= V
= -10 V, I
= -4.5 V, I
= -10 V, V
= -10 V, I
= -15 V, V
= -10 V , R
= -10 V, I
= -10 V
= 0 V, I
= 0 V, I
GS
, I
D
F
D
S
= -250 µA
= -1.3 A
DS
= -250 µA
= -1.3 A
D
DS
D
D
D
GS
GS
DS
D
b. 125
= -1 A
GEN
= -4 A
= 0 V
= 0 V
= -4 A
= -4 A,
= -3.2 A
= 0 V
pad of 2oz copper.
= -5 V
= 0 V,
= 6
O
C/W on a 0.02 in
(Note 2)
T
J
=125°C
o
o
C
C
2
Min
-30
-20
-1
0.044
0.067
-0.75
Typ
0.06
-1.5
730
400
-23
3.5
3.6
0.8
90
11
10
90
55
19
48
4
8
c. 135
pad of 2oz copper.
0.052
0.085
O
Max
-100
-100
0.08
110
-1.3
-1.2
100
C/W on a 0.003 in
20
18
80
27
-1
-3
JC
is guaranteed by
FDS8947A Rev.B
mV /
mV /
Units
µA
nA
nA
nC
ns
ns
V
V
A
S
pF
pF
pF
A
V
A
o
C
o
2
C