2N7002DW L6327 Infineon Technologies, 2N7002DW L6327 Datasheet - Page 5

• Manufacturer Part Number: 2N7002DW L6327
• Description: MOSFET 2N-CH 60V 300MA SOT363
• Manufacturer: Infineon Technologies
• Series: OptiMOS™r

Specifications of 2N7002DW L6327

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 3 Ohm @ 500mA, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 300mA
• Vgs(th) (max) @ Id: 2.5V @ 250µA
• Gate Charge (qg) @ Vgs: 0.6nC @ 10V
• Input Capacitance (ciss) @ Vds: 20pF @ 25V
• Power - Max: 500mW
• Mounting Type: Surface Mount
• Package / Case: SC-70-6, SC-88, SOT-363
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SP000408436

Rev.2.2
5 Typ. output characteristics
I
parameter: V
7 Typ. transfer characteristics
I
D
D
=f(V
=f(V
0.6
0.5
0.4
0.3
0.2
0.1
0.6
0.5
0.4
0.3
0.2
0.1
DS
0
GS
0
); T
0
0
); |V
10 V
j
=25 °C
GS
DS
|>2|I
7 V
1
1
5 V
4.5 V
D
|R
DS(on)max
2
2
V
V
DS
GS
[V]
[V]
3
3
4
4
2.9 V
3.2 V
3.5 V
4 V
page 5
5
5
6 Typ. drain-source on resistance
R
parameter: V
8 Typ. forward transconductance
g
fs
DS(on)
=f(I
0.45
0.35
0.25
0.15
0.05
0.5
0.4
0.3
0.2
0.1
D
0
=f(I
6
5
4
3
2
1
0
0.00
); T
0
D
2.9 V
j
); T
=25 °C
GS
j
=25 °C
0.10
3.2 V
0.1
0.2
0.20
3.5 V
I
I
D
D
[A]
[A]
0.3
0.30
2N7002DW
0.4
10 V
5 V
0.40
4 V
7 V
4.5 V
2011-06-16
0.5